RFD12N06RLESM9A

MOSFET 60V Single

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RFD12N06RLESM9A: MOSFET 60V Single

floor Price/Ceiling Price

US $ .32~.48 / Piece | Get Latest Price
Part Number:
RFD12N06RLESM9A
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~25
  • 25~100
  • 100~250
  • Unit Price
  • $.48
  • $.42
  • $.37
  • $.32
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/5/1

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 60 V
Gate-Source Breakdown Voltage : +/- 16 V Continuous Drain Current : 17 A
Resistance Drain-Source RDS (on) : 0.075 Ohms Configuration : Single
Maximum Operating Temperature : + 175 C Mounting Style : SMD/SMT
Package / Case : TO-252AA Packaging : Reel    

Description

Transistor Polarity : N-Channel
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : SMD/SMT
Packaging : Reel
Continuous Drain Current : 17 A
Drain-Source Breakdown Voltage : 60 V
Gate-Source Breakdown Voltage : +/- 16 V
Resistance Drain-Source RDS (on) : 0.075 Ohms
Package / Case : TO-252AA


Parameters:

Technical/Catalog InformationRFD12N06RLESM9A
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)60V
Current - Continuous Drain (Id) @ 25° C18A
Rds On (Max) @ Id, Vgs63 mOhm @ 18A, 10V
Input Capacitance (Ciss) @ Vds 485pF @ 25V
Power - Max49W
PackagingTape & Reel (TR)
Gate Charge (Qg) @ Vgs15nC @ 10V
Package / CaseDPak, SC-63, TO-252 (2 leads+tab)
FET FeatureLogic Level Gate
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names RFD12N06RLESM9A
RFD12N06RLESM9A



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