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RFD16N06LESM, RFD16N06LESM9A, RFD16N06LFSM

RFD16N06LESM, RFD16N06LESM9A, RFD16N06LFSM Selling Leads, Datasheet

MFG:Fairchild Semiconductor (VA)  Category:Discrete Semiconductor Products  Package Cooled:TO-252  D/C:TO

RFD16N06LESM9A Picture

RFD16N06LESM, RFD16N06LESM9A, RFD16N06LFSM Datasheet download

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Part Number: RFD16N06LESM9A

Category: Discrete Semiconductor Products

MFG: Fairchild Semiconductor (VA)

Package Cooled: TO-252

D/C: TO

Description: MOSFET N-CHAN 60V 16A TO-252AA

 

 
 
 
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  • RFD14N05

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About RFD16N06LESM

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Datasheet: RFD16N06LESM

File Size: 198216 KB

Manufacturer: INTERSIL [Intersil Corporation]

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  • RFD14N05

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  • ALCON TECHNOLOGY CO., LTD.   China
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  • RFD14N05L

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About RFD10P03

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Datasheet: RFD10P03

File Size: 278675 KB

Manufacturer: FAIRCHILD [Fairchild Semiconductor]

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  • RFD14N05L

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About RFD10P03

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Datasheet: RFD10P03

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Manufacturer: FAIRCHILD [Fairchild Semiconductor]

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RFD16N06LESM General Description

These are N-Channel power MOSFETs manufactured using a modern process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching regulators, switching converters, motor drivers, relay drivers and emitter switches for bipolar transistors. This performance is accomplished through a special gate oxide design which provides full rated conductance at gate bias in the 3V to 5V range, thereby facilitating true on-off power control directly from logic level (5V) integrated circuits

RFD16N06LESM Maximum Ratings

  RFD16N06LESM UNITS
Drain to Source Voltage (Note 1) VDSS 60 V
Drain to Gate Voltage (RGS = 1MW) (Note 1)VDGR 60 V
Continuous (Figure 2)ID 16 A
Pulsed Drain Current (Note 3) IDM Refer to Peak Current Curve A
Gate to Source Voltage VGS +10, -8 V

Pulsed Drain Current IDM

Refer to UIS Curve
W
Power Dissipation 90
Derate above 25oC 0.606 A
Pulsed Avalanche Rating UIS Refer to UIS SOA  
Operating and Storage Temperature .TJ, TSTG -55 to 75 o C
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s TL 300 o C
Package Body for 10s, See Techbrief 334 Tpkg 260 o C

RFD16N06LESM Features

• 16A, 60V
• rDS(ON) = 0.047Ω
• Temperature Compensating PSPICE® Model
• Can be Driven Directly from CMOS, NMOS, TTL Circuits
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• Related Literature - TB334 "Guidelines for Soldering Surface Mount Components to PC Boards"

RFD16N06LESM9A Parameters

Technical/Catalog InformationRFD16N06LESM9A
VendorFairchild Semiconductor (VA)
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)60V
Current - Continuous Drain (Id) @ 25° C16A
Rds On (Max) @ Id, Vgs47 mOhm @ 16A, 5V
Input Capacitance (Ciss) @ Vds 1350pF @ 25V
Power - Max90W
PackagingDigi-Reel?
Gate Charge (Qg) @ Vgs62nC @ 10V
Package / CaseDPak, SC-63, TO-252 (2 leads+tab)
FET FeatureLogic Level Gate
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names RFD16N06LESM9A
RFD16N06LESM9A
RFD16N06LESM9ADKR ND
RFD16N06LESM9ADKRND
RFD16N06LESM9ADKR

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