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RFD3055, RFD3055LE, RFD3055LESM

Table of contents:
Info of RFD3055
Info of RFD3055LE
Info of RFD3055LESM

RFD3055, RFD3055LE, RFD3055LESM Selling Leads, Datasheet

MFG:Fairchild Semiconductor Category:Discrete Semiconductor Products Package Cooled:TO-252 D/C:N/A

RFD3055, RFD3055LE, RFD3055LESM Datasheet download

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Part Number: RFD3055LE

Category: Discrete Semiconductor Products

MFG: Fairchild Semiconductor

Package Cooled: TO-252

D/C: N/A

Description: MOSFET N-CH 60V 11A TO-252AA

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RFD3055 Parameters

Technical/Catalog Information	RFD3055
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	60V
Current - Continuous Drain (Id) @ 25° C	12A
Rds On (Max) @ Id, Vgs	150 mOhm @ 12A, 10V
Input Capacitance (Ciss) @ Vds	300pF @ 25V
Power - Max	53W
Packaging	Tube
Gate Charge (Qg) @ Vgs	23nC @ 20V
Package / Case	IPak, TO-251, DPak, VPak (3 straight leads + tab)
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	RFD3055 RFD3055

RFD3055 Maximum Ratings

	RFD3055, RFD3055SM, RFP3055	UNITS
Drain to Source Voltage (Note 1) V_DSS	60	V
Drain to Gate Voltage (RGS = 1MW) (Note 1)V_DGR	60	V
Continuous (Figure 2)ID	±20	A
Pulsed Drain Current (Note 3)DM	Refer to Peak Current Curve	A
Gate to Source Voltage V_GS	-5 to10	V
Power DissipationPD	40	W
Linear Derating Factor	0.357	W/oC
Derate above 25oC	38	W
Single Pulse Avalanche Energy RatingEAS	Refer to UIS Curve
Operating and Storage Temperature .TJ, T^STG	-55 to 75	^o C
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s TL	300	^oC
Package Body for 10s, See Techbrief 334 Tpkg	260	^oC

RFD3055 Features

• 12A, 60V
• DS(ON)= 0.150Ω
• Temperature Compensating PSPICE®Model
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• 175^oC Operating Temperature
• Related Literature- TB334 "Guidelines for Soldering Surface MountComponents to PC Boards"

RFD3055LE Parameters

Technical/Catalog Information	RFD3055LE
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	60V
Current - Continuous Drain (Id) @ 25° C	11A
Rds On (Max) @ Id, Vgs	107 mOhm @ 8A, 5V
Input Capacitance (Ciss) @ Vds	350pF @ 25V
Power - Max	38W
Packaging	Tube
Gate Charge (Qg) @ Vgs	11.3nC @ 10V
Package / Case	IPak, TO-251, DPak, VPak (3 straight leads + tab)
FET Feature	Logic Level Gate
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	RFD3055LE RFD3055LE

RFD3055LE Maximum Ratings

	RFD3055LE, RFD3055LESM, RFP3055LE	UNITS
Drain to Source Voltage (Note 1) V_DSS	60	V
Drain to Gate Voltage (RGS = 1MW) (Note 1)V_DGR	60	V
Continuous (Figure 2)ID	±16	A
Pulsed Drain Current (Note 3)IDM	Refer to Peak Current Curve	A
Gate to Source Voltage V_GS	-5 to10	V
Power DissipationPD	40	W
Linear Derating Factor	0.32	W/^o C
Derate above 25oC	38	W
Single Pulse Avalanche Energy RatingEAS	Refer to UIS Curve
Operating and Storage Temperature .TJ, T^STG	-55 to 75	^o C
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s TL	300	^oC
Package Body for 10s, See Techbrief 334 Tpkg	260	^oC

RFD3055LE Features

• 11A, 60V
• rDS(ON) = 0.107Ω
• Temperature Compensating PSPICE® Model
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• Related Literature- TB334 "Guidelines for Soldering Surface MountComponents to PC Boards"

RFD3055LESM Parameters

Technical/Catalog Information	RFD3055LESM
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	60V
Current - Continuous Drain (Id) @ 25° C	11A
Rds On (Max) @ Id, Vgs	107 mOhm @ 8A, 5V
Input Capacitance (Ciss) @ Vds	350pF @ 25V
Power - Max	38W
Packaging	Tube
Gate Charge (Qg) @ Vgs	11.3nC @ 10V
Package / Case	DPak, SC-63, TO-252 (2 leads+tab)
FET Feature	Logic Level Gate
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	RFD3055LESM RFD3055LESM

RFD3055LESM Maximum Ratings

	RFD3055LE, RFD3055LESM, RFP3055LE	UNITS
Drain to Source Voltage (Note 1) V_DSS	60	V
Drain to Gate Voltage (RGS = 1MW) (Note 1)V_DGR	60	V
Continuous (Figure 2)ID	±16	A
Pulsed Drain Current (Note 3)IDM	Refer to Peak Current Curve	A
Gate to Source Voltage V_GS	-5 to10	V
Power DissipationPD	40	W
Linear Derating Factor	0.32	W/^o C
Derate above 25oC	38	W
Single Pulse Avalanche Energy RatingEAS	Refer to UIS Curve
Operating and Storage Temperature .TJ, T^STG	-55 to 75	^o C
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s TL	300	^oC
Package Body for 10s, See Techbrief 334 Tpkg	260	^oC

RFD3055LESM Features

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