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RFD3N08, RFD3N08L, RFD3N08LSM

Table of contents:
Info of RFD3N08
Info of RFD3N08L
Info of RFD3N08LSM

RFD3N08, RFD3N08L, RFD3N08LSM Selling Leads, Datasheet

MFG:/ Package Cooled:9800 D/C:TO

RFD3N08, RFD3N08L, RFD3N08LSM Datasheet download

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Part Number: RFD3N08

MFG: /

Package Cooled: 9800

D/C: TO

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RFD3N08L General Description

These N-Channel power MOSFETs are manufactured using a modern process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching regulators, switching converters, motor drivers, relay drivers and emitter switches for bipolar transistors. This performance is accomplished through a special gate oxide design which provides full rated conductance at gate bias in the 3V to 5V range, thereby facilitating true on-off power control directly from logic level (5V) integrated circuits. Formerly developmental type TA49046.

RFD3N08L Maximum Ratings

	RFD3N08L, RFD3N08LSM	UNITS
Drain to Source Voltage (Note 1) V_DSS	80	V
Drain to Gate Voltage (RGS = 1MW) (Note 1)V_DGR	80	V
Continuous (Figure 2)ID	20	A
Pulsed Drain Current (Note 3) I_DM	Refer to Peak Current Curve	A
Gate to Source Voltage V_GS	±10	V
Pulsed Drain Current IDM	Refer to Peak Current Curve	W
Pulsed Avalanche Rating EAS	Figure 6	W
Derate above 25oC	0.2	A
Pulsed Avalanche Rating UIS	Refer to UIS SOA
Operating and Storage Temperature .TJ, T^STG	-55 to 75	^o C
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s TL	300	^oC
Package Body for 10s, See Techbrief 334 Tpkg	260	^oC

RFD3N08L Features

• 3A, 80V
• rDS(ON) = 0.800W
• Temperature Compensating PSPICE® Model
• On Resistance vs Gate Drive Voltage Curves
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• 175oC Operating Temperature
• Related Literature- TB334 "Guidelines for Soldering Surface MountComponents to PC Boards"

RFD3N08LSM General Description

RFD3N08LSM Maximum Ratings

	RFD3N08L, RFD3N08LSM	UNITS
Drain to Source Voltage (Note 1) V_DSS	80	V
Drain to Gate Voltage (RGS = 1MW) (Note 1)V_DGR	80	V
Continuous (Figure 2)ID	20	A
Pulsed Drain Current (Note 3) I_DM	Refer to Peak Current Curve	A
Gate to Source Voltage V_GS	±10	V
Pulsed Drain Current IDM	Refer to Peak Current Curve	W
Pulsed Avalanche Rating EAS	Figure 6	W
Derate above 25oC	0.2	A
Pulsed Avalanche Rating UIS	Refer to UIS SOA
Operating and Storage Temperature .TJ, T^STG	-55 to 75	^o C
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s TL	300	^oC
Package Body for 10s, See Techbrief 334 Tpkg	260	^oC

RFD3N08LSM Features

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