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RFD4N06LSM9A, RFD4N06SM, RFD7N10LE

Table of contents:
Info of RFD4N06LSM9A
Info of RFD4N06SM
Info of RFD7N10LE

RFD4N06LSM9A, RFD4N06SM, RFD7N10LE Selling Leads, Datasheet

MFG:Fairchild Semiconductor Category:Discrete Semiconductor Products Package Cooled:TO-252(DPAK) D/C:2009+

RFD4N06LSM9A, RFD4N06SM, RFD7N10LE Picture

RFD4N06LSM9A, RFD4N06SM, RFD7N10LE Datasheet download

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Part Number: RFD4N06LSM9A

Category: Discrete Semiconductor Products

MFG: Fairchild Semiconductor

Package Cooled: TO-252(DPAK)

D/C: 2009+

Description: MOSFET N-CHAN 60V 4A TO-252AA

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RFD4N06LSM9A Parameters

Technical/Catalog Information	RFD4N06LSM9A
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	60V
Current - Continuous Drain (Id) @ 25° C	4A
Rds On (Max) @ Id, Vgs	600 mOhm @ 1A, 5V
Input Capacitance (Ciss) @ Vds	-
Power - Max	30W
Packaging	Tape & Reel (TR)
Gate Charge (Qg) @ Vgs	8nC @ 10V
Package / Case	DPak, SC-63, TO-252 (2 leads+tab)
FET Feature	Logic Level Gate
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	RFD4N06LSM9A RFD4N06LSM9A

RFD7N10LE General Description

These N-Channel power MOSFETs are manufactured using a modern process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching regulators, switching converters, motor drivers, relay drivers and emitter switches for bipolar transistors. This performance is accomplished through a special gate oxide design which provides full rated conductance at gate bias in the 3V to 5V range, thereby facilitating true on-off power control directly from logic level (5V) integrated circuits. Formerly developmental type TA49046.

RFD7N10LE Maximum Ratings

	RFD7N10LE, RFD7N10LESM	UNITS
Drain to Source Voltage (Note 1) V_DSS	100	V
Drain to Gate Voltage (RGS = 1MW) (Note 1)V_DGR	100	V
Continuous Drain Current ID15	-8	A
Pulsed Drain Current (Note 3) I_DM	Refer to UIS Curve	A
Gate to Source Voltage V_GS	+10, -8	V
Pulsed Drain Current IDM	Refer to Peak Current Curve	W
Pulsed Avalanche Rating EAS	Figures 6, 16, 17	W
Derate above 25oC	0.27	A
Pulsed Avalanche Rating UIS	Refer to UIS SOA
Operating and Storage Temperature .TJ, T^STG	-55 to 75	^o C
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s TL	300	^oC
Package Body for 10s, See Techbrief 334 Tpkg	260	^oC

RFD7N10LE Features

• 7A, 100V
• rDS(ON) = 0.300Ω
• Temperature Compensating PSPICE® Model
• Can be Driven Directly from CMOS, NMOS, TTL Circuits
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• 175oC Operating Temperature
• Related Literature- TB334 "Guidelines for Soldering Surface Mount Components to PC Boards"

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