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RFD7N10LESM, RFD7N10SM, RFD8P03LSM

RFD7N10LESM, RFD7N10SM, RFD8P03LSM Selling Leads, Datasheet

MFG:INTERSIL  Package Cooled:TO-252  D/C:2006

RFD7N10LESM, RFD7N10SM, RFD8P03LSM Picture

RFD7N10LESM, RFD7N10SM, RFD8P03LSM Datasheet download

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Part Number: RFD7N10LESM

 

MFG: INTERSIL

Package Cooled: TO-252

D/C: 2006

 

 

 
 
 
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  • RFD14N05

  • Vendor: Fairchild D/C: 06+& Qty: 1,000 Note: 04 OEM STK  Adddate: 2026-06-02
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  • ALCON TECHNOLOGY CO., LTD.   China
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  • RFD14N05L

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About RFD7N10LESM

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Datasheet: RFD7N10LESM

File Size: 370208 KB

Manufacturer: INTERSIL [Intersil Corporation]

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  • ALCON TECHNOLOGY CO., LTD.   China
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  • RFD14N05L

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About RFD10P03

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Datasheet: RFD10P03

File Size: 278675 KB

Manufacturer: FAIRCHILD [Fairchild Semiconductor]

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RFD8P03LSM Suppliers

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  • RFD14N05

  • Vendor: Fairchild D/C: 06+& Qty: 1,000 Note: 04 OEM STK  Adddate: 2026-06-02
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  • ALCON TECHNOLOGY CO., LTD.   China
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  • RFD14N05L

  • Vendor: Fairchild D/C: 06+& Qty: 10,000 Note: 04 OEM STK  Adddate: 2026-06-02
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  • ALCON TECHNOLOGY CO., LTD.   China
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    Tel: 86-755-83803182
    Fax: --
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About RFD10P03

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Datasheet: RFD10P03

File Size: 278675 KB

Manufacturer: FAIRCHILD [Fairchild Semiconductor]

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RFD7N10LESM General Description

These N-Channel power MOSFETs are manufactured using a modern process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching regulators, switching converters, motor drivers, relay drivers and emitter switches for bipolar transistors. This performance is accomplished through a special gate oxide design which provides full rated conductance at gate bias in the 3V to 5V range, thereby facilitating true on-off power control directly from logic level (5V) integrated circuits. Formerly developmental type TA49046.

RFD7N10LESM Maximum Ratings

  RFD7N10LE,
RFD7N10LESM
UNITS
Drain to Source Voltage (Note 1) VDSS 100 V
Drain to Gate Voltage (RGS = 1MW) (Note 1)VDGR 100 V
Continuous Drain Current ID15 -8 A
Pulsed Drain Current (Note 3) IDM Refer to UIS Curve A
Gate to Source Voltage VGS +10, -8 V

Pulsed Drain Current IDM

Refer to Peak Current Curve
W
Pulsed Avalanche Rating EAS Figures 6, 16, 17
Derate above 25oC 0.27 A
Pulsed Avalanche Rating UIS Refer to UIS SOA  
Operating and Storage Temperature .TJ, TSTG -55 to 75 o C
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s TL 300 o C
Package Body for 10s, See Techbrief 334 Tpkg 260 o C

RFD7N10LESM Features

• 7A, 100V
• rDS(ON) = 0.300Ω
• Temperature Compensating PSPICE® Model
• Can be Driven Directly from CMOS, NMOS, TTL Circuits
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• 175oC Operating Temperature
• Related Literature- TB334 "Guidelines for Soldering Surface Mount Components to PC Boards"

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