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These N-Channel power MOSFETs are manufactured using a modern process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching regulators, switching converters, motor drivers, relay drivers and emitter switches for bipolar transistors. This performance is accomplished through a special gate oxide design which provides full rated conductance at gate bias in the 3V to 5V range, thereby facilitating true on-off power control directly from logic level (5V) integrated circuits. Formerly developmental type TA49046
RFD8P05 Maximum Ratings
RFD8P05, RFD8P05SM, RFP8P05
UNITS
Drain to Source Voltage (Note 1) VDSS
-50
V
Drain to Gate Voltage (RGS = 1MW) (Note 1)VDGR
-50
V
Continuous Drain Current ID15
-8
A
Pulsed Drain Current (Note 3) IDM
Refer to UIS Curve
A
Gate to Source Voltage VGS
±20
V
Power Dissipation PD 25oC
80
W
Pulsed Avalanche Rating EAS
Figures 6, 16, 17
Derate above 25oC
0.27
A
Pulsed Avalanche Rating UIS
Refer to UIS SOA
Operating and Storage Temperature .TJ, TSTG
-55 to 75
o C
Maximum Temperature for Soldering
Maximum Lead Temperature for Soldering TL (0.063in (1.6mm) from case for 10s)
300
o C
RFD8P05 Features
• 8A, 50V • rDS(ON) = 0.300W • UIS SOA Rating Curve • SOA is Power Dissipation Limited • Nanosecond Switching Speeds • Linear Transfer Characteristics • High Input Impedance • Related Literature TB334 "Guidelines for Soldering Surface Mount Components to PC Boards"