RFD8P06E, RFD8P06ESM, RFD8P06ESM9A Selling Leads, Datasheet
MFG:FAIRCHILD Package Cooled:TO-251/252 D/C:TO
RFD8P06E, RFD8P06ESM, RFD8P06ESM9A Datasheet download
Part Number: RFD8P06E
MFG: FAIRCHILD
Package Cooled: TO-251/252
D/C: TO
RFD8P06E, RFD8P06ESM, RFD8P06ESM9A
- Table of contents:
Info of RFD8P06E
Info of RFD8P06ESM
Info of RFD8P06ESM9A
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About RFD8P06E
PDF/DataSheet Download
Datasheet: RFD8P06E
File Size: 89800 KB
Manufacturer: INTERSIL [Intersil Corporation]
Download : Click here to Download
About RFD8P06ESM
PDF/DataSheet Download
Datasheet: RFD8P06ESM
File Size: 89800 KB
Manufacturer: INTERSIL [Intersil Corporation]
Download : Click here to Download
About RFD10P03
PDF/DataSheet Download
Datasheet: RFD10P03
File Size: 278675 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
RFD8P06E General Description
The RFD20N03 and RFD20N03SM N-Channel power MOSFETs are manufactured using the MegaFET process. This process which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching regulators, switching converters, motor drivers, and relay drivers. These transistors can be operated directly from integrated circuits. Formerly developmental type TA49235.
RFD8P06E Maximum Ratings
| RFD8P06E, RFD8P06ESM, RFP8P06E | UNITS | |
| Drain to Source Voltage (Note 1) VDSS | -60 | V |
| Drain to Gate Voltage (RGS = 1MW) (Note 1)VDGR | -60 | V |
| Continuous (Figure 2)ID | 16 | A |
| Pulsed Drain Current (Note 3) IDM | Refer to Peak Current Curve | A |
| Gate to Source Voltage VGS | ±20 | V |
Pulsed Drain Current IDM |
Refer to UIS Curve |
W |
| Power Dissipation | Refer to UIS Curve | |
| Derate above 25oC | 0.32 | W/oC |
| Pulsed Avalanche Rating UIS | Refer to UIS SOA | |
| Operating and Storage Temperature .TJ, TSTG | -55 to 75 | o C |
| Maximum Temperature for Soldering | ||
| Leads at 0.063in (1.6mm) from Case for 10s TL | 300 | o C |
| Package Body for 10s, See Techbrief 334 Tpkg | 260 | o C |
RFD8P06E Features
• 8A, 60V
• rDS(ON) = 0.300W
• Temperature Compensating PSPICE® Model
• 2kV ESD Protected
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• 175oC Operating Temperature
• Related Literature- TB334 "Guidelines for Soldering Surface MountComponents to PC Boards"
• rDS(ON) = 0.300W
• Temperature Compensating PSPICE® Model
• 2kV ESD Protected
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• 175oC Operating Temperature
• Related Literature- TB334 "Guidelines for Soldering Surface MountComponents to PC Boards"
RFD8P06ESM General Description
The RFD20N03 and RFD20N03SM N-Channel power MOSFETs are manufactured using the MegaFET process. This process which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching regulators, switching converters, motor drivers, and relay drivers. These transistors can be operated directly from integrated circuits. Formerly developmental type TA49235.
RFD8P06ESM Maximum Ratings
| RFD8P06E, RFD8P06ESM, RFP8P06E | UNITS | |
| Drain to Source Voltage (Note 1) VDSS | -60 | V |
| Drain to Gate Voltage (RGS = 1MW) (Note 1)VDGR | -60 | V |
| Continuous (Figure 2)ID | 16 | A |
| Pulsed Drain Current (Note 3) IDM | Refer to Peak Current Curve | A |
| Gate to Source Voltage VGS | ±20 | V |
Pulsed Drain Current IDM |
Refer to UIS Curve |
W |
| Power Dissipation | Refer to UIS Curve | |
| Derate above 25oC | 0.32 | W/oC |
| Pulsed Avalanche Rating UIS | Refer to UIS SOA | |
| Operating and Storage Temperature .TJ, TSTG | -55 to 75 | o C |
| Maximum Temperature for Soldering | ||
| Leads at 0.063in (1.6mm) from Case for 10s TL | 300 | o C |
| Package Body for 10s, See Techbrief 334 Tpkg | 260 | o C |
RFD8P06ESM Features
• 8A, 60V
• rDS(ON) = 0.300W
• Temperature Compensating PSPICE® Model
• 2kV ESD Protected
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• 175oC Operating Temperature
• Related Literature- TB334 "Guidelines for Soldering Surface MountComponents to PC Boards"
• rDS(ON) = 0.300W
• Temperature Compensating PSPICE® Model
• 2kV ESD Protected
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• 175oC Operating Temperature
• Related Literature- TB334 "Guidelines for Soldering Surface MountComponents to PC Boards"
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