RFD8P06LE, RFD8P06LESM, RFD8P06SM Selling Leads, Datasheet
MFG:/ Package Cooled:TO-252 D/C:TO
RFD8P06LE, RFD8P06LESM, RFD8P06SM Datasheet download

Part Number: RFD8P06LE
MFG: /
Package Cooled: TO-252
D/C: TO
MFG:/ Package Cooled:TO-252 D/C:TO
RFD8P06LE, RFD8P06LESM, RFD8P06SM Datasheet download

MFG: /
Package Cooled: TO-252
D/C: TO
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PDF/DataSheet Download
Datasheet: RFD8P06LE
File Size: 105252 KB
Manufacturer: INTERSIL [Intersil Corporation]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: RFD8P06LESM
File Size: 105252 KB
Manufacturer: INTERSIL [Intersil Corporation]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: RFD10P03
File Size: 278675 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
These products are P-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits, gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching regulators, switching converters, motor drivers, and relay drivers. These transistors can be operated directly from integrated circuits. Formerly developmental type TA49203.
| RFD8P06LE, RFD8P06LESM, RFP8P06LE |
UNITS | |
| Drain to Source Voltage (Note 1) VDSS | -60 | V |
| Drain to Gate Voltage (RGS = 1MW) (Note 1)VDGR | -60 | V |
| Continuous Drain Current ID15 | A | |
| TC = 25oC ID |
-8 | |
| TC = 100oC . ID | -6.3 | |
| Pulsed Drain Current (Note 3) IDM | Refer to UIS Curve | A |
| Gate to Source Voltage VGS | ±10 | V |
Power Dissipation PD 25oC |
80 | W |
| Pulsed Avalanche Rating EAS | Figures 6, 16, 17 | |
| Derate above 25oC | 0.533 | A |
| Pulsed Avalanche Rating UIS | Refer to UIS SOA | |
| Operating and Storage Temperature .TJ, TSTG | -55 to 75 | o C |
| Maximum Temperature for Soldering | ||
| Maximum Lead Temperature for Soldering TL (0.063in (1.6mm) from case for 10s) |
300 | o C |
These products are P-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits, gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching regulators, switching converters, motor drivers, and relay drivers. These transistors can be operated directly from integrated circuits. Formerly developmental type TA49203.
| RFD8P06LE, RFD8P06LESM, RFP8P06LE |
UNITS | |
| Drain to Source Voltage (Note 1) VDSS | -60 | V |
| Drain to Gate Voltage (RGS = 1MW) (Note 1)VDGR | -60 | V |
| Continuous Drain Current ID15 | A | |
| TC = 25oC ID |
-8 | |
| TC = 100oC . ID | -6.3 | |
| Pulsed Drain Current (Note 3) IDM | Refer to UIS Curve | A |
| Gate to Source Voltage VGS | ±10 | V |
Power Dissipation PD 25oC |
80 | W |
| Pulsed Avalanche Rating EAS | Figures 6, 16, 17 | |
| Derate above 25oC | 0.533 | A |
| Pulsed Avalanche Rating UIS | Refer to UIS SOA | |
| Operating and Storage Temperature .TJ, TSTG | -55 to 75 | o C |
| Maximum Temperature for Soldering | ||
| Maximum Lead Temperature for Soldering TL (0.063in (1.6mm) from case for 10s) |
300 | o C |
