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These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits.
RFP18N08 Maximum Ratings
RFM18N08
RFM18N10
RFP18N08
RFP18N10
UNITS
Drain to Source Voltage (Note 1) VDSS
80
100
80
100
V
Drain to Gate Voltage (RGS = 1MW) (Note 1)VDGR
80
100
80
100
V
Continuous Drain Current ID
18
18
18
18
A
Pulsed Drain Current (Note 3) IDM
45
45
45
45
A
Gate to Source Voltage VGS
±20
±20
±20
±20
V
Maximum Power Dissipation PD
100
100
100
100
W
Continuous (TC= 100oC, VGS = 10V) (Figure 2) ID
0.8
0.8
0.8
0.8
W/oC
Operating and Storage Temperature .TJ, TSTG
-55 to 150
-55 to 150
-55 to 150
-55 to 150
oC
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. TL
300
300
300
300
o C
Package Body for 10s, See Techbrief 334 Tpkg
260
260
260
260
o C
RFP18N08 Features
• 18A, 80V and 100V • rDS(ON) = 0.100W • Related Literature- TB334 "Guidelines for Soldering Surface Mount Components to PC Boards"
RFP18N10 General Description
These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits.
RFP18N10 Maximum Ratings
RFM18N08
RFM18N10
RFP18N08
RFP18N10
UNITS
Drain to Source Voltage (Note 1) VDSS
80
100
80
100
V
Drain to Gate Voltage (RGS = 1MW) (Note 1)VDGR
80
100
80
100
V
Continuous Drain Current ID
18
18
18
18
A
Pulsed Drain Current (Note 3) IDM
45
45
45
45
A
Gate to Source Voltage VGS
±20
±20
±20
±20
V
Maximum Power Dissipation PD
100
100
100
100
W
Continuous (TC= 100oC, VGS = 10V) (Figure 2) ID
0.8
0.8
0.8
0.8
W/oC
Operating and Storage Temperature .TJ, TSTG
-55 to 150
-55 to 150
-55 to 150
-55 to 150
oC
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. TL
300
300
300
300
o C
Package Body for 10s, See Techbrief 334 Tpkg
260
260
260
260
o C
RFP18N10 Features
• 18A, 80V and 100V • rDS(ON) = 0.100W • Related Literature- TB334 "Guidelines for Soldering Surface Mount Components to PC Boards"
RFP22N10 Parameters
Technical/Catalog Information
RFP22N10
Vendor
Fairchild Semiconductor
Category
Discrete Semiconductor Products
Mounting Type
Through Hole
FET Polarity
N-Channel
Drain to Source Voltage (Vdss)
100V
Current - Continuous Drain (Id) @ 25° C
22A
Rds On (Max) @ Id, Vgs
80 mOhm @ 22A, 10V
Input Capacitance (Ciss) @ Vds
-
Power - Max
100W
Packaging
Tube
Gate Charge (Qg) @ Vgs
150nC @ 20V
Package / Case
TO-220AB
FET Feature
Standard
Lead Free Status
Lead Free
RoHS Status
RoHS Compliant
Other Names
RFP22N10 RFP22N10
RFP22N10 General Description
These N-Channel power MOSFETs are manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching regulators, switching converters, motor drivers, and relay drivers. These transistors can be operated directly from integrated circuits.
Formerly developmental type TA9845.
RFP22N10 Maximum Ratings
Drain to Source Voltage (Note 1)
VDSS
100
V
Drain to Gate Voltage (RGS = 20kW)(Note 1)
VDGR
100
V
Gate to Source Voltage
VGS
±20
V
Continuous Drain Current
ID
22
A
Pulsed Drain Current
IDM
50
A
Maximum Power Dissipation
PD
100
W
Linear Derating Factor
0.67
W/
Operating and Storage Temperature
TJ , TSTG
-55 to175
Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s. Package Body for 10s, See Techbrief 334
T L Tpkg
300 260
CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
RFP22N10 Features
• 22A, 100V • rDS(ON) = 0.080W • UIS SOA Rating Curve (Single Pulse) • SOA is Power Dissipation Limited • Nanosecond Switching Speeds • Linear Transfer Characteristics • High Input Impedance • 175oC Operating Temperature • Related Literature - TB334 "Guidelines for Soldering Surface Mount Components to PC Boards"