RFP12N06

The features of RFP12N06 are: (1)ultra low on-resistance: rDS(ON)=0.063, VGS=10V; rDS(ON)=0.071, VGS=5V; (2)simulation models; (3)peak current vs pulse width curve; (4)UIS rating curves; (5)switching time vs RGS curves.

The following is about the absolute maximum ratings of RFP12N06: (1)drain-source voltage: 60V; (2)drain-gate voltage, Rgs=1M: 60V; (3)gate-source voltage: ±16V; (4)power dissipation: 49W, derate above 25: 0.327W/; (5)operating and storage temperature: -55 to +175; (6)maximum temperature for soldering: leads at 0.063in (1.6mm) from case for 10s: 300, package body for 10s: 260.

The electrical characteristics of the RFP12N06 are: (1)drain-source breakdown voltage: 60V min at ID=250A, VGS=0; (2)gate thresholad voltage: 1V min and 3V max at VDS=VGS, ID=250A; (3)zero gate voltage drain: 1A max at VDS=55V; (4)gate-source leakage current: ±100nA max at VGS=±16V; (5)drain-source on resistance: 0.052 typ and 0.063 max at ID=18A, VGS=10V; (6)input capacitance: 485pF max at VDS=25V, VGS=0V, f=1MHz; (7)output capacitance: 130pF max at VDS=25V, VGS=0V, f=1MHz.