RFP25N05, RFP25N05L, RFP25N06 Selling Leads, Datasheet
MFG:Intersil Package Cooled:GEN,HAR D/C:TO
RFP25N05, RFP25N05L, RFP25N06 Datasheet download
Part Number: RFP25N05
MFG: Intersil
Package Cooled: GEN,HAR
D/C: TO
MFG:Intersil Package Cooled:GEN,HAR D/C:TO
RFP25N05, RFP25N05L, RFP25N06 Datasheet download
MFG: Intersil
Package Cooled: GEN,HAR
D/C: TO
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Datasheet: RFP25N05
File Size: 241315 KB
Manufacturer: ETC [ETC]
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PDF/DataSheet Download
Datasheet: RFP25N05L
File Size: 48218 KB
Manufacturer: INTERSIL [Intersil Corporation]
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PDF/DataSheet Download
Datasheet: RFP25N06
File Size: 109094 KB
Manufacturer: ETC [ETC]
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Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . VDS Drain to Gate Voltage (RGS = 20kW) (Note 1) . . . . . . . . . VDGR Continuous Drain Current . . . . . . . . . . . . . . . . . . . .ID Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . IDM Single Pulse Avalanche Energy Rating (See Figures 4, 15, and 16). Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . VGS Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . PD Linear Derating Factor above 25oC . . . . . . . . . . . . . . . . Operating and Storage Temperature . . . . . . . . . . . . TJ, TSTG Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . TL Package Body for 10s, See Techbrief 334 . . . . . . . . . . ..Tpkg |
RFP25N05L 50 50 25 65 Refer to UIS SOA Curve ±10 60 0.48 -55 to 150 300 260 |
UNITS V V A A V W W/oC oC oC oC |
These N-Channel power MOSFETs are manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding prformance. They were designed for use in applications such as switching regulators, switching converters, motor drivers, and relay drivers. These transistors can be operated directly from integrated circuits.
Formerly developmental type TA09771.
Drain to Source Voltage (Note 1) | VDSS | 60 | V |
Drain to Gate Voltage (RGS = 20kW)(Note 1) | VDGR | 60 | V |
Gate to Source Voltage | VGS | ±20 | V |
Continuous Drain Current(Figure 2) | ID | 25 | A |
Pulsed Drain Current | IDM | (Figure 5) | A |
Single Pulse Avalanche Rating | EAS | (Figure 5) |
A |
Power Dissipation | PD | 72 | W |
Linear Derating Factor | 0.48 | W/ | |
Operating and Storage Temperature | TJ, TSTG | -55 to 175 | |
Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s. Package Body for 10s, See Techbrief 334 |
T L Tpkg |
300 260 |
CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.