RFP25N06L, RFP2N08, RFP2N08L Selling Leads, Datasheet
MFG:FAIRCHILD Package Cooled:TO-220 D/C:05+
RFP25N06L, RFP2N08, RFP2N08L Datasheet download
Part Number: RFP25N06L
MFG: FAIRCHILD
Package Cooled: TO-220
D/C: 05+
RFP25N06L, RFP2N08, RFP2N08L
- Table of contents:
Info of RFP25N06L
Info of RFP2N08
Info of RFP2N08L
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About RFP-100-50SMA-B
PDF/DataSheet Download
Datasheet: RFP-100-50SMA-B
File Size: 112721 KB
Manufacturer: ETC [ETC]
Download : Click here to Download
About RFP2N08
PDF/DataSheet Download
Datasheet: RFP2N08
File Size: 47858 KB
Manufacturer: INTERSIL [Intersil Corporation]
Download : Click here to Download
About RFP2N08L
PDF/DataSheet Download
Datasheet: RFP2N08L
File Size: 36409 KB
Manufacturer: INTERSIL [Intersil Corporation]
Download : Click here to Download
RFP2N08 General Description
These are N-channel enhancement mode silicon gate power field effect transistors designed for applications such
switching regulators, switching converters. motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrate circuits.
RFP2N08 Maximum Ratings
| RFP2P08 | RFP2P10 | UNITS | |
| Drain to Source Voltage (Note 1) VDSS | 80 | 100 | V |
| Drain to Gate Voltage (RGS = 1MW) (Note 1)VDGR | 80 | 100 | V |
| Continuous Drain Current ID | 2 | 2 | A |
| Pulsed Drain Current (Note 3) IDM | 5 | 5 | A |
| Gate to Source Voltage VGS | ±20 | ±20 | V |
| Maximum Power Dissipation PD | 25 | 25 | W |
| Linear Derating Factor | 0.2 | 0.2 | W/o Caaa |
| Operating and Storage Temperature .TJ, TSTG | -55 to 150 | -55 to 150 | o C |
| Maximum Temperature for Soldering | |||
| Leads at 0.063in (1.6mm) from Case for 10s. TL | 300 | 300 | o C |
| Package Body for 10s, See Techbrief 334 Tpkg | 260 | 260 | o C |
RFP2N08 Features
• 2A, 80V and 100V
• rDS(ON) 1.05W
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• Majority Carrier Device
• Related Literature
- TB334 "Guidelines for Soldering Surface Mount Components to PC Boards"
• rDS(ON) 1.05W
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• Majority Carrier Device
• Related Literature
- TB334 "Guidelines for Soldering Surface Mount Components to PC Boards"
RFP2N08L Maximum Ratings
| Drain to Source Voltage (Note 1). . . . . . . . . . VDS Drain to Gate Voltage (RGS = 1MW) (Note 1) . . . . . VDGR Continuous Drain Current. . . . . . . . . . . . . ..ID Pulsed Drain Current (Note 3). . . . . . . . . . . IDM Gate to Source Voltage . . . . . . . . . . . . . . .VGS Maximum Power Dissipation . . . . . . . . . . . . . .PD Derate above 25oC . . . . . . . . . . . . . . . . . Operating and Storage Temperature. . . . . . . TJ, TSTG Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s. . . . .. TL Package Body for 10s, See Techbrief 334 . . . . . . Tpkg |
RFP15N08L 80 80 ±10 15 40 72 0.48 -55 to 175 300 260 |
UNITS V V V A A W W/oC o C o C o C |
RFP2N08L Features
• 2A, 80V and 100V
• rDS(ON) = 1.050W
• Design Optimized for 5V Gate Drives
• Can be Driven Directly from QMOS, NMOS, TTL Circuits
• Compatible with Automotive Drive Requirements
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• Majority Carrier Device
• Related Literature
- TB334 "Guidelines for Soldering Surface Mount Components to PC Boards"
• rDS(ON) = 1.050W
• Design Optimized for 5V Gate Drives
• Can be Driven Directly from QMOS, NMOS, TTL Circuits
• Compatible with Automotive Drive Requirements
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• Majority Carrier Device
• Related Literature
- TB334 "Guidelines for Soldering Surface Mount Components to PC Boards"
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