RFP2N12L, RFP2N15, RFP2N15L Selling Leads, Datasheet
MFG:Intersil Package Cooled:9800 D/C:TO
RFP2N12L, RFP2N15, RFP2N15L Datasheet download
Part Number: RFP2N12L
MFG: Intersil
Package Cooled: 9800
D/C: TO
MFG:Intersil Package Cooled:9800 D/C:TO
RFP2N12L, RFP2N15, RFP2N15L Datasheet download
MFG: Intersil
Package Cooled: 9800
D/C: TO
Want to post a buying lead? If you are not a member yet, please select the specific/related part number first and then fill the quantity and your contact details in the "Request for Quotation Form" on the left, and then click "Send RFQ".Your buying lead can then be posted, and the reliable suppliers will quote via our online message system or other channels soon.
TOP
PDF/DataSheet Download
Datasheet: RFP2N12L
File Size: 36200 KB
Manufacturer: INTERSIL [Intersil Corporation]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: RFP2N15
File Size: 36047 KB
Manufacturer: INTERSIL [Intersil Corporation]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: RFP-100-50SMA-B
File Size: 112721 KB
Manufacturer: ETC [ETC]
Download : Click here to Download
RFP2P20 | UNITS | |
Drain to Source Voltage (Note 1) VDSS | 120 | V |
Drain to Gate Voltage (RGS = 1MW) (Note 1)VDGR | 120 | V |
Continuous Drain Current ID | 2 | A |
Pulsed Drain Current (Note 3) IDM | 5 | A |
Gate to Source Voltage VGS | ±20 | V |
Maximum Power Dissipation PD | 25 | W |
Linear Derating Factor | 0.2 | W/o Caaa |
Operating and Storage Temperature .TJ, TSTG | -55 to 150 | o C |
Maximum Temperature for Soldering | ||
Leads at 0.063in (1.6mm) from Case for 10s. TL | 300 | o C |
Package Body for 10s, See Techbrief 334 Tpkg | 260 | o C |
These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such
as switching regulators, switching converters, motor drivers, relay drivers and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits.
RFP2N12 | RFP2N15 | UNITS | |
Drain to Source Voltage (Note 1) VDSS | 120 | 150 | V |
Drain to Gate Voltage (RGS = 1MW) (Note 1)VDGR | 120 | 150 | V |
Continuous Drain Current ID | 2 | 2 | A |
Pulsed Drain Current (Note 3) IDM | 5 | 5 | A |
Gate to Source Voltage VGS | ±20 | ±20 | V |
Maximum Power Dissipation PD | 25 | 25 | W |
Linear Derating Factor | 0.2 | 0.2 | W/o Caaa |
Operating and Storage Temperature .TJ, TSTG | -55 to 150 | -55 to 150 | o C |
Maximum Temperature for Soldering | |||
Leads at 0.063in (1.6mm) from Case for 10s. TL | 300 | 300 | o C |
Package Body for 10s, See Techbrief 334 Tpkg | 260 | 260 | o C |