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RFP2P10, RFP3055, RFP3055LE

Table of contents:
Info of RFP2P10
Info of RFP3055
Info of RFP3055LE

RFP2P10, RFP3055, RFP3055LE Selling Leads, Datasheet

MFG:Fairchild Semiconductor Category:Discrete Semiconductor Products Package Cooled:HAR D/C:08+/09+

RFP2P10, RFP3055, RFP3055LE Datasheet download

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Part Number: RFP3055

Category: Discrete Semiconductor Products

MFG: Fairchild Semiconductor

Package Cooled: HAR

D/C: 08+/09+

Description: MOSFET N-CH 60V 11A TO-220AB

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RFP2P10 Maximum Ratings

	RFP2P08	RFP2P10	UNITS
Drain to Source Voltage (Note 1) VDSS	-80	-100	V
Drain to Gate Voltage (RGS = 20kW) (Note 1) VDGR	-80	-100	V
Continuous Drain Current ID	2	2	A
Pulsed Drain Current (Note 3) IDM	5	5	A
Gate to Source Voltage VGS	±20	±20	V
Maximum Power Dissipation PD	25	25	W
Linear Derating Factor	0.2	0.2	W/^oCaaa
Operating and Storage Temperature .TJ, TSTG	-55 to 150	-55 to 150	^o C
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. TL	300	300	^oC
Package Body for 10s, See Techbrief 334 Tpkg	260	260	^o C

RFP2P10 Features

• -2A, -80V and -100V
• rDS(ON) = 3.500W
• Related Literature
- TB334 "Guidelines for Soldering Surface Mount Components to PC Boards

RFP3055 Parameters

Technical/Catalog Information	RFP3055
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	60V
Current - Continuous Drain (Id) @ 25° C	12A
Rds On (Max) @ Id, Vgs	150 mOhm @ 12A, 10V
Input Capacitance (Ciss) @ Vds	300pF @ 25V
Power - Max	53W
Packaging	Tube
Gate Charge (Qg) @ Vgs	23nC @ 20V
Package / Case	TO-220AB
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	RFP3055 RFP3055

RFP3055 Maximum Ratings

	RFD3055, RFD3055SM, RFP3055	UNITS
Drain to Source Voltage (Note 1) V_DSS	60	V
Drain to Gate Voltage (RGS = 1MW) (Note 1)V_DGR	60	V
Continuous (Figure 2)ID	±20	A
Pulsed Drain Current (Note 3)DM	Refer to Peak Current Curve	A
Gate to Source Voltage V_GS	-5 to10	V
Power DissipationPD	40	W
Linear Derating Factor	0.357	W/oC
Derate above 25oC	38	W
Single Pulse Avalanche Energy RatingEAS	Refer to UIS Curve
Operating and Storage Temperature .TJ, T^STG	-55 to 75	^o C
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s TL	300	^oC
Package Body for 10s, See Techbrief 334 Tpkg	260	^oC

RFP3055 Features

• 12A, 60V
• DS(ON)= 0.150Ω
• Temperature Compensating PSPICE®Model
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• 175^oC Operating Temperature
• Related Literature- TB334 "Guidelines for Soldering Surface MountComponents to PC Boards"

RFP3055LE Parameters

Technical/Catalog Information	RFP3055LE
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	60V
Current - Continuous Drain (Id) @ 25° C	11A
Rds On (Max) @ Id, Vgs	107 mOhm @ 8A, 5V
Input Capacitance (Ciss) @ Vds	350pF @ 25V
Power - Max	38W
Packaging	Tube
Gate Charge (Qg) @ Vgs	11.3nC @ 10V
Package / Case	TO-220AB
FET Feature	Logic Level Gate
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	RFP3055LE RFP3055LE

RFP3055LE Maximum Ratings

	RFD3055LE, RFD3055LESM, RFP3055LE	UNITS
Drain to Source Voltage (Note 1) V_DSS	60	V
Drain to Gate Voltage (RGS = 1MW) (Note 1)V_DGR	60	V
Continuous (Figure 2)ID	±16	A
Pulsed Drain Current (Note 3)IDM	Refer to Peak Current Curve	A
Gate to Source Voltage V_GS	-5 to10	V
Power DissipationPD	40	W
Linear Derating Factor	0.32	W/^o C
Derate above 25oC	38	W
Single Pulse Avalanche Energy RatingEAS	Refer to UIS Curve
Operating and Storage Temperature .TJ, T^STG	-55 to 75	^o C
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s TL	300	^oC
Package Body for 10s, See Techbrief 334 Tpkg	260	^oC

RFP3055LE Features

• 11A, 60V
• rDS(ON) = 0.107Ω
• Temperature Compensating PSPICE® Model
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• Related Literature- TB334 "Guidelines for Soldering Surface MountComponents to PC Boards"

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