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These are N-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching regulators, switching converters, motor drivers and relay drivers. These transistors can be operated directly from integrated circuits.
These transistors incorporate ESD protection and are designed to withstand 2kV (Human Body Model) of ESD.
Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s. Package Body for 10s, See Techbrief 334
T L Tpkg
300 260
CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
RFP30N06LE Features
• 30A, 60V • r DS(ON) = 0.047W • 2kV ESD Protected • Temperature Compensating PSPICE™ Model • Peak Current vs Pulse Width Curve • UIS Rating Curve • Related Literature - TB334 "Guidelines for Soldering Surface Mount Components to PC Boards"