MFG:Fairchild Semiconductor Category:Discrete Semiconductor Products Package Cooled:TO-220 D/C:05+
RFP30P05, RFP30P06, RFP3N45 Datasheet download
Category: Discrete Semiconductor Products
MFG: Fairchild Semiconductor
Package Cooled: TO-220
D/C: 05+
Description: MOSFET P-CH 60V 30A TO-220AB
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PDF/DataSheet Download
Datasheet: RFP30P05
File Size: 72597 KB
Manufacturer: INTERSIL [Intersil Corporation]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: RFP30P06
File Size: 72870 KB
Manufacturer: INTERSIL [Intersil Corporation]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: RFP3N45
File Size: 83910 KB
Manufacturer: INTERSIL [Intersil Corporation]
Download : Click here to Download
| Technical/Catalog Information | RFP30P05 |
| Vendor | Fairchild Semiconductor |
| Category | Discrete Semiconductor Products |
| Mounting Type | Through Hole |
| FET Polarity | P-Channel |
| Drain to Source Voltage (Vdss) | 50V |
| Current - Continuous Drain (Id) @ 25° C | 30A |
| Rds On (Max) @ Id, Vgs | 65 mOhm @ 30A, 10V |
| Input Capacitance (Ciss) @ Vds | 3200pF @ 25V |
| Power - Max | 120W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | 170nC @ 20V |
| Package / Case | TO-220AB |
| FET Feature | Standard |
| Lead Free Status | Contains Lead |
| RoHS Status | RoHS Non-Compliant |
| Other Names | RFP30P05 RFP30P05 |
These are P-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits, gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching regulators, switching converters, motor drivers, and relay drivers. These transistors can be operated directly from integrated circuits.
Formerly developmental type TA09834.
| UNITS | |||
| Drain to Source Voltage (Note 1) | VDSS | -50 | V |
| Drain to Gate Voltage (RGS = 20kW)(Note 1) | VDGR | -50 | V |
| Gate to Source Voltage | VGS | ±20 | V |
| Continuous Drain Current | ID | 30 | A |
| Pulsed Drain Current (Note 3) (Figure 5) | IDM | Refer to Peak Current Curve | |
| Power Dissipation | PD | 120 | W |
| Linear Derating Factor | 0.8 | W/ | |
| Single Pulse Avalanche Rating (Figure 6) | EAS | Refer to UIS Curve | |
| Operating and Storage Temperature | TJ, TSTG | -55 to 175 | |
| Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s. Package Body for 10s, See Techbrief 334 |
T L Tpkg |
300 260 |
CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
| Technical/Catalog Information | RFP30P06 |
| Vendor | Fairchild Semiconductor |
| Category | Discrete Semiconductor Products |
| Mounting Type | Through Hole |
| FET Polarity | P-Channel |
| Drain to Source Voltage (Vdss) | 60V |
| Current - Continuous Drain (Id) @ 25° C | 30A |
| Rds On (Max) @ Id, Vgs | 65 mOhm @ 30A, 10V |
| Input Capacitance (Ciss) @ Vds | 3200pF @ 25V |
| Power - Max | 135W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | 170nC @ 20V |
| Package / Case | TO-220AB |
| FET Feature | Standard |
| Lead Free Status | Contains Lead |
| RoHS Status | RoHS Non-Compliant |
| Other Names | RFP30P06 RFP30P06 |
These are P-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits, gives optimum utilization of silicon, resulting in outstanding performance. They are designed for use in applications such as switching regulators, switching converters, motor drivers, and relay drivers. These transistors can be operated directly from integrated circuits.
Formerly developmental type TA09834.
| UNITS | |||
| Drain to Source Voltage (Note 1) | VDSS | -60 | V |
| Drain to Gate Voltage (RGS = 20kW)(Note 1) | VDGR | -60 | V |
| Gate to Source Voltage | VGS | ±20 | V |
| Continuous Drain Current | ID | 30 | A |
| Pulsed Drain Current (Note 3) (Figure 5) | IDM | Refer to Peak Current Curve | |
| Single Pulse Avalanche Rating (Figure 6) | EAS | Refer to UIS Curve | |
| Power Dissipation | PD | 135 | W |
| Linear Derating Factor | 0.9 | W/ | |
| Operating and Storage Temperature | TJ, TSTG | -55 to 175 | |
| Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s. Package Body for 10s, See Techbrief 334 |
TL Tpkg |
300 260 |
CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits.
| RFM3N45 | RFM3N50 | RFP3N45 | RFP3N50 | UNITS | |
| Drain to Source Voltage (Note 1) VDSS | 450 | 200 | 500 | 500 | V |
| Drain to Gate Voltage (RGS = 1MW) (Note 1)VDGR | 450 | 200 | 500 | 500 | V |
| Continuous Drain Current ID | 3 | 3 | 3 | 3 | A |
| Pulsed Drain Current (Note 3) IDM | 30 | 30 | 30 | 30 | A |
| Gate to Source Voltage VGS | ±20 | ±20 | ±20 | ±20 | V |
| Maximum Power Dissipation PD | 75 | 75 | 60 | 60 | W |
| Continuous (TC= 100oC, VGS = 10V) (Figure 2) ID | 0.8 | 0.8 | 0.8 | 0.8 | W/oC |
| Operating and Storage Temperature .TJ, TSTG | -55 to 150 | -55 to 150 | -55 to 150 | -55 to 150 | oC |
| Maximum Temperature for Soldering | |||||
| Leads at 0.063in (1.6mm) from Case for 10s. TL | 300 | 300 | 300 | 300 | o C |
| Package Body for 10s, See Techbrief 334 Tpkg | 260 | 260 | 260 | 260 | o C |
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