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These are N-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits, gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching regulators, switching converters, motor drivers and relay drivers. These transistors can be operated directly from integrated circuits.
Formerly developmental type TA49030.
RFP45N03L Maximum Ratings
UNITS
Drain to Source Voltage (Note 1)
VDSS
30
V
Drain to Gate Voltage (RGS = 20kW)(Note 1)
VDGR
30
V
Gate to Source Voltage
VGS
±10
V
Continuous Drain Current
ID
45
A
Pulsed Drain Current (Note 3)
IDM
Refer to Peak Current Curve
A
Pulse Avalanche Rating
EAS
Refer to UIS Curve
A
Power Dissipation
PD
90
W
Derate Above 25
0.606
W/
Operating and Storage Temperature
TJ, TSTG
-55 to 175
Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s. Package Body for 10s, See Techbrief 334
T L Tpkg
300 260
CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
RFP45N03L Features
• 45A, 30V • r DS(ON) = 0.022W • Temperature Compensating PSPICE Model • Can be Driven Directly from CMOS, NMOS, and TTL Circuits • Peak Current vs Pulse Width Curve • UIS Rating Curve • 175oC Operating Temperature • Related Literature - TB334 "Guidelines for Soldering Surface Mount Components to PC Boards"
RFP45N06 Parameters
Technical/Catalog Information
RFP45N06
Vendor
Fairchild Semiconductor
Category
Discrete Semiconductor Products
Mounting Type
Through Hole
FET Polarity
N-Channel
Drain to Source Voltage (Vdss)
60V
Current - Continuous Drain (Id) @ 25° C
45A
Rds On (Max) @ Id, Vgs
28 mOhm @ 45A, 10V
Input Capacitance (Ciss) @ Vds
2050pF @ 25V
Power - Max
131W
Packaging
Tube
Gate Charge (Qg) @ Vgs
150nC @ 20V
Package / Case
TO-220AB
FET Feature
Standard
Lead Free Status
Lead Free
RoHS Status
RoHS Compliant
Other Names
RFP45N06 RFP45N06
RFP45N06 General Description
These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits.
Formerly developmental type TA49028.
RFP45N06 Maximum Ratings
UNITS
Drain to Source Voltage (Note 1)
VDSS
60
V
Drain to Gate Voltage (RGS = 20kW)(Note 1)
VDGR
60
V
Continuous Drain Current
ID
45
A
Pulsed Drain Current (Note 3)
IDM
Refer to Peak Current Curve
Gate to Source Voltage
VGS
±20
V
Pulse Avalanche Rating
EAS
Refer to UIS Curve
Power Dissipation
PD
131
W
Linear Derating Factor
0.877
W/
Operating and Storage Temperature
TJ , TSTG
-55 to 175
Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s. Package Body for 10s, See Techbrief 334
T L Tpkg
300 260
CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
RFP45N06 Features
• 45A, 60V • rDS(ON) = 0.028W • Temperature Compensating PSPICE® Model • Peak Current vs Pulse Width Curve • UIS Rating Curve • 175oC Operating Temperature • Related Literature - TB334 "Guidelines for Soldering Surface Mount Components to PC Boards"