MFG:Fairchild Semiconductor Category:Discrete Semiconductor Products Package Cooled:GEN,HAR D/C:TO
RFP4N06L, RFP4N100, RFP4N35 Datasheet download
Category: Discrete Semiconductor Products
MFG: Fairchild Semiconductor
Package Cooled: GEN,HAR
D/C: TO
Description: MOSFET N-CH 1KV 4.3A TO-220AB
Want to post a buying lead? If you are not a member yet, please select the specific/related part number first and then fill the quantity and your contact details in the "Request for Quotation Form" on the left, and then click "Send RFQ".Your buying lead can then be posted, and the reliable suppliers will quote via our online message system or other channels soon.
TOP
PDF/DataSheet Download
Datasheet: RFP4N06L
File Size: 36568 KB
Manufacturer: INTERSIL [Intersil Corporation]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: RFP4N100
File Size: 47101 KB
Manufacturer: INTERSIL [Intersil Corporation]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: RFP4N35
File Size: 39459 KB
Manufacturer: INTERSIL [Intersil Corporation]
Download : Click here to Download
| RFP4N05L | RFP4N06L | UNITS | |
| Drain to Source Voltage (Note 1) VDSS | 50 | 60 | V |
| Drain to Gate Voltage (RGS = 1MW) (Note 1)VDGR | 50 | 60 | V |
| Continuous Drain Current ID | 4 | 4 | A |
| Pulsed Drain Current (Note 3) IDM | 10 | 10 | A |
| Gate to Source Voltage VGS | ±20 | ±20 | V |
| Maximum Power Dissipation PD | 25 | 25 | W |
| Linear Derating Factor | 0.2 | 0.2 | W/o Caaa |
| Operating and Storage Temperature .TJ, TSTG | -55 to 150 | -55 to 150 | o C |
| Maximum Temperature for Soldering | |||
| Leads at 0.063in (1.6mm) from Case for 10s. TL | 300 | 300 | o C |
| Package Body for 10s, See Techbrief 334 Tpkg | 260 | 260 | o C |
| Technical/Catalog Information | RFP4N100 |
| Vendor | Fairchild Semiconductor |
| Category | Discrete Semiconductor Products |
| Mounting Type | Through Hole |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 1000V (1kV) |
| Current - Continuous Drain (Id) @ 25° C | 4.3A |
| Rds On (Max) @ Id, Vgs | 3.5 Ohm @ 2.5A, 10V |
| Input Capacitance (Ciss) @ Vds | - |
| Power - Max | 150W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | 120nC @ 20V |
| Package / Case | TO-220AB |
| FET Feature | Logic Level Gate |
| Lead Free Status | Contains Lead |
| RoHS Status | RoHS Non-Compliant |
| Other Names | RFP4N100 RFP4N100 |
The RFP4N100 and RFP4N100SM are N-Channel enhancement mode silicon gate power field effect transistors. They are designed for use in applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. This type can be operated directly from an integrated circuit.
Formerly developmental type TA09850.
| UNITS | |||
| Drain to Source Breakdown Voltage (Note 1) | VDS | 1000 | V |
| Drain to Gate Voltage (RGS = 20kW) (Note 1) . | VDGR | 1000 | V |
| Continuous Drain Current | ID | 4.6 | V |
| Pulsed Drain Current (Note 3) | IDM | 17 | A |
| Gate to Source Voltage | VGS | ±20 | V |
| Single Pulse Avalanche Rating | EAS | Refer to UIS Curve | mj |
| (Figures 4, 14, 15) | |||
| Maximum Power Dissipation | PD | 150 | W |
| Linear Derating Factor | 1.2 | W/ | |
| Operating and Storage Temperature | TJ, TSTG | -55 to 150 | |
| Soldering Temperature of Leads for 10s | T L Tpkg |
300 260 |
CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
| RFM7N35 | RFM7N40 | RFP7N35 | RFP7N40 | UNITS | |
| Drain to Source Voltage (Note 1) VDSS | 350 | 400 | 350 | 400 | V |
| Drain to Gate Voltage (RGS = 1MW) (Note 1)VDGR | 350 | 400 | 350 | 400 | V |
| Continuous Drain Current ID | 4 | 4 | 4 | 4 | A |
| Pulsed Drain Current (Note 3) IDM | 8 | 8 | 8 | 8 | A |
| Gate to Source Voltage VGS | ±20 | ±20 | ±20 | ±20 | V |
| Maximum Power Dissipation PD | 100 | 100 | 100 | 100 | W |
| Continuous (TC= 100oC, VGS = 10V) (Figure 2) ID | 0.6 | 0.6 | 0.6 | 0.6 | W/oC |
| Operating and Storage Temperature .TJ, TSTG | -55 to 150 | -55 to 150 | -55 to 150 | -55 to 150 | oC |
| Maximum Temperature for Soldering | |||||
| Leads at 0.063in (1.6mm) from Case for 10s. TL | 300 | 300 | 300 | 300 | o C |
| Package Body for 10s, See Techbrief 334 Tpkg | 260 | 260 | 260 | 260 | o C |
Price: 4-6 USD
MT58L64L18CT-10 TQFP100
Price: 5-6.5 USD
DL-7140-211M laser tube
Price: 4-5 USD
74LVC74APG - IC FLIP FLOP D-Type POS-EDG DUAL 14TSSOP
Price: 6.5-8 USD
CYPRESS - Clock Synthesizer with Differential CPU Outputs
Price: 0.284-0.286 USD
PI5V330QEX Pericom Multiplexer Switch ICs
Price: 1-2 USD
IGBT power module, Single switch, 1200 V, Collector-emitter voltage, 430A
Price: 1-2 USD
a-Si TFT-LCD, NEC, 228.096Hmm, 560V
Price: 0.124-0.2 USD
PC354N1T - Mini-flat Package, AC Input Type Photocoupler - Sharp Electrionic Components
Price: 0.177-0.178 USD
RL1210JR51-XX-BL - Thick Film Chip Resistor Low Ohmic - TAITRON Components Incorporated
Price: 0.053-0.055 USD
STPS140A - POWER SCHOTTKY RECTIFIER - STMicroelectronics
Price: 1.45-1.5 USD
STA013 - MPEG 2.5 LAYER III AUDIO DECODER - STMicroelectronics
Price: 0.073-0.075 USD
SMBJ5347B - 5 Watt Surface Mount Silicon Zener Diodes - Micro Commercial Components
