MFG:Fairchild Semiconductor Category:Discrete Semiconductor Products Package Cooled:9800 D/C:08+/09+
RFP50N05L, RFP50N06, RFP50N06LE Datasheet download
Category: Discrete Semiconductor Products
MFG: Fairchild Semiconductor
Package Cooled: 9800
D/C: 08+/09+
Description: MOSFET N-CH 60V 50A TO-220AB
Want to post a buying lead? If you are not a member yet, please select the specific/related part number first and then fill the quantity and your contact details in the "Request for Quotation Form" on the left, and then click "Send RFQ".Your buying lead can then be posted, and the reliable suppliers will quote via our online message system or other channels soon.
TOP
PDF/DataSheet Download
Datasheet: RFP50N05L
File Size: 53047 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: RFP50N06
File Size: 76050 KB
Manufacturer: INTERSIL [Intersil Corporation]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: RFP50N06LE
File Size: 422229 KB
Manufacturer: INTERSIL [Intersil Corporation]
Download : Click here to Download
| Technical/Catalog Information | RFP50N05L |
| Vendor | Fairchild Semiconductor |
| Category | Discrete Semiconductor Products |
| Mounting Type | Through Hole |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 50V |
| Current - Continuous Drain (Id) @ 25° C | 50A |
| Rds On (Max) @ Id, Vgs | 22 mOhm @ 50A, 5V |
| Input Capacitance (Ciss) @ Vds | - |
| Power - Max | 110W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | 140nC @ 10V |
| Package / Case | TO-220AB |
| FET Feature | Logic Level Gate |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | RFP50N05L RFP50N05L |
These are logic-level N-channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use with logic-level (5V) driving sources in applications such as programmable controllers, automotive switching, switching regulators, switching converters, motor relay drivers and emitter switches for bipolar transistors. This performance is accomplished through a special gate oxide design which provides full rated conductance at gate bias in the 3V - 5V range, thereby facilitating true on-off power control directly from integrated circuit supply voltages.
Formerly developmental type TA09872.
| RFG50N05L | RFP50N05L | UNITS | |
| Drain to Source Voltage (Note 1) VDSS | 50 | 50 | V |
| Drain to Gate Voltage (RGS = 1MW) (Note 1)VDGR | 50 | 50 | V |
| Continuous Drain Curren ID | 50 | 50 | A |
| Pulsed Drain Current (Note 3) IDM | 130 | 130 | V |
| Maximum Power Dissipation PD | ±10 | ±10 | V |
| Maximum Power Dissipation | 110 | 110 | W |
| Operating and Storage Temperature .TJ, TSTG | -55 to 150 | -55 to 150 | o C |
| Linear Derating Factor | 0.88 | 0.88 | W/oC |
| Leads at 0.063in (1.6mm) from Case for 10s. TL | 300 | 300 | o C |
| Package Body for 10s, See Techbrief 334 (for TO-218AC) Tpkg | 260 | 260 | o C |
| Technical/Catalog Information | RFP50N06 |
| Vendor | Fairchild Semiconductor |
| Category | Discrete Semiconductor Products |
| Mounting Type | Through Hole |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 60V |
| Current - Continuous Drain (Id) @ 25° C | 50A |
| Rds On (Max) @ Id, Vgs | 22 mOhm @ 50A, 10V |
| Input Capacitance (Ciss) @ Vds | 2020pF @ 25V |
| Power - Max | 131W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | 150nC @ 20V |
| Package / Case | TO-220AB |
| FET Feature | Standard |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | RFP50N06 RFP50N06 |
These N-Channel power MOSFETs are manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching regulators, switching converters, motor drivers, and relay drivers. These transistors can be operated directly from integrated circuits.
Formerly developmental type TA49018.
| UNITS | |||
| Drain to Source Voltage (Note 1) | VDSS | 60 | V |
| Drain to Gate Voltage (RGS = 20kW)(Note 1) | VDGR | 60 | V |
| Gate to Source Voltage | VGS | ±20 | V |
| Pulsed Drain Current (Figure 2) | ID | 50 | A |
| Pulsed Drain Current | IDM | (Figure 5) | |
| Pulse Avalanche Rating | EAS | (Figure 6, 14, 15) | |
| Power Dissipation | PD | 131 | W |
| Linear Derating Factor | 0.877 | W/ | |
| Operating and Storage Temperature | TJ, TSTG | -55 to 175 | |
| Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s. Package Body for 10s, See Techbrief 334 |
TL Tpkg |
300 260 |
CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
Price: 4-6 USD
MT58L64L18CT-10 TQFP100
Price: 5-6.5 USD
DL-7140-211M laser tube
Price: 4-5 USD
74LVC74APG - IC FLIP FLOP D-Type POS-EDG DUAL 14TSSOP
Price: 6.5-8 USD
CYPRESS - Clock Synthesizer with Differential CPU Outputs
Price: 0.284-0.286 USD
PI5V330QEX Pericom Multiplexer Switch ICs
Price: 1-2 USD
IGBT power module, Single switch, 1200 V, Collector-emitter voltage, 430A
Price: 1-2 USD
a-Si TFT-LCD, NEC, 228.096Hmm, 560V
Price: 0.124-0.2 USD
PC354N1T - Mini-flat Package, AC Input Type Photocoupler - Sharp Electrionic Components
Price: 0.177-0.178 USD
RL1210JR51-XX-BL - Thick Film Chip Resistor Low Ohmic - TAITRON Components Incorporated
Price: 0.053-0.055 USD
STPS140A - POWER SCHOTTKY RECTIFIER - STMicroelectronics
Price: 1.45-1.5 USD
STA013 - MPEG 2.5 LAYER III AUDIO DECODER - STMicroelectronics
Price: 0.073-0.075 USD
SMBJ5347B - 5 Watt Surface Mount Silicon Zener Diodes - Micro Commercial Components
