MFG:Fairchild Semiconductor Category:Discrete Semiconductor Products Package Cooled:9800 D/C:08+/09+
RFP6P08, RFP6P10, RFP70N03 Datasheet download
Category: Discrete Semiconductor Products
MFG: Fairchild Semiconductor
Package Cooled: 9800
D/C: 08+/09+
Description: MOSFET N-CH 30V 70A TO-220AB
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PDF/DataSheet Download
Datasheet: RFP6P08
File Size: 317848 KB
Manufacturer: ETC [ETC]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: RFP6P10
File Size: 317848 KB
Manufacturer: ETC [ETC]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: RFP70N03
File Size: 602428 KB
Manufacturer: INTERSIL [Intersil Corporation]
Download : Click here to Download
| RFP6P08 | RFP6P10 | UNITS | |
| Drain to Source Voltage (Note 1) VDSS | 80 | 100 | V |
| Drain to Gate Voltage (RGS = 1MW) (Note 1)VDGR | 80 | 100 | V |
| Continuous Drain Current | |||
| RMS Continuous ID | 6 | 6 | A |
| Pulsed Drain Current (Note 3) IDM | ±20 | ±20 | V |
| Maximum Power Dissipation PD | ±20 | ±20 | V |
| Maximum Power Dissipation PD | 60 | 60 | W |
| Operating and Storage Temperature .TJ, TSTG | -55 to 150 | -55 to 150 | o C |
| Maximum Temperature for Soldering | |||
| Leads at 0.063in (1.6mm) from Case for 10s. TL | 300 | 300 | o C |
| Package Body for 10s, See Techbrief 334 Tpkg | 260 | 260 | o C |
| RFP6P08 | RFP6P10 | UNITS | |
| Drain to Source Voltage (Note 1) VDSS | 80 | 100 | V |
| Drain to Gate Voltage (RGS = 1MW) (Note 1)VDGR | 80 | 100 | V |
| Continuous Drain Current | |||
| RMS Continuous ID | 6 | 6 | A |
| Pulsed Drain Current (Note 3) IDM | ±20 | ±20 | V |
| Maximum Power Dissipation PD | ±20 | ±20 | V |
| Maximum Power Dissipation PD | 60 | 60 | W |
| Operating and Storage Temperature .TJ, TSTG | -55 to 150 | -55 to 150 | o C |
| Maximum Temperature for Soldering | |||
| Leads at 0.063in (1.6mm) from Case for 10s. TL | 300 | 300 | o C |
| Package Body for 10s, See Techbrief 334 Tpkg | 260 | 260 | o C |
| Technical/Catalog Information | RFP70N03 |
| Vendor | Fairchild Semiconductor |
| Category | Discrete Semiconductor Products |
| Mounting Type | Through Hole |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25° C | 70A |
| Rds On (Max) @ Id, Vgs | 10 mOhm @ 70A, 10V |
| Input Capacitance (Ciss) @ Vds | 3300pF @ 25V |
| Power - Max | 150W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | 260nC @ 20V |
| Package / Case | TO-220AB |
| FET Feature | Standard |
| Lead Free Status | Contains Lead |
| RoHS Status | RoHS Non-Compliant |
| Other Names | RFP70N03 RFP70N03 |
These N-Channel power MOSFETs are manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching regulators, switching converters, motor drivers, and relay drivers. These transistors can be operated directly from integrated circuits.
Formerly developmental type TA49025.
| UNITS | |||
| Drain to Source Voltage (Note 1) | VDSS | 30 | V |
| Drain to Gate Voltage (RGS = 20kW)(Note 1) | VDGR | 30 | V |
| Gate to Source Voltage | VGS | ±20 | V |
| Continuous Drain Current (Figure 2) | ID | 70 | A |
| Pulsed Drain Current | IDM | 200 | A |
| Pulsed Avalanche Rating | EAS | Figure 5,13,14 | |
| Power Dissipation | PD | 150 | W |
| Derate Above 25 | 1.0 | W/ | |
| Operating and Storage Temperature | TJ, TSTG | -55 to 175 | |
| Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s. Package Body for 10s, See Techbrief 334 |
T L Tpkg |
300 260 |
CAUTION: Stresses above those listed in "Absolute M aximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
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