RFP8P06E, RFP8P06LE, RFP8P08 Selling Leads, Datasheet
MFG:Intersil Package Cooled:TO-220 D/C:TO
RFP8P06E, RFP8P06LE, RFP8P08 Datasheet download

Part Number: RFP8P06E
MFG: Intersil
Package Cooled: TO-220
D/C: TO
MFG:Intersil Package Cooled:TO-220 D/C:TO
RFP8P06E, RFP8P06LE, RFP8P08 Datasheet download

MFG: Intersil
Package Cooled: TO-220
D/C: TO
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PDF/DataSheet Download
Datasheet: RFP8P06E
File Size: 89800 KB
Manufacturer: INTERSIL [Intersil Corporation]
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PDF/DataSheet Download
Datasheet: RFP8P06LE
File Size: 105252 KB
Manufacturer: INTERSIL [Intersil Corporation]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: RFP8P08
File Size: 285880 KB
Manufacturer: HARRIS [Harris Corporation]
Download : Click here to Download
The RFD20N03 and RFD20N03SM N-Channel power MOSFETs are manufactured using the MegaFET process. This process which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching regulators, switching converters, motor drivers, and relay drivers. These transistors can be operated directly from integrated circuits. Formerly developmental type TA49235.
| RFD8P06E, RFD8P06ESM, RFP8P06E | UNITS | |
| Drain to Source Voltage (Note 1) VDSS | -60 | V |
| Drain to Gate Voltage (RGS = 1MW) (Note 1)VDGR | -60 | V |
| Continuous (Figure 2)ID | 16 | A |
| Pulsed Drain Current (Note 3) IDM | Refer to Peak Current Curve | A |
| Gate to Source Voltage VGS | ±20 | V |
Pulsed Drain Current IDM |
Refer to UIS Curve |
W |
| Power Dissipation | Refer to UIS Curve | |
| Derate above 25oC | 0.32 | W/oC |
| Pulsed Avalanche Rating UIS | Refer to UIS SOA | |
| Operating and Storage Temperature .TJ, TSTG | -55 to 75 | o C |
| Maximum Temperature for Soldering | ||
| Leads at 0.063in (1.6mm) from Case for 10s TL | 300 | o C |
| Package Body for 10s, See Techbrief 334 Tpkg | 260 | o C |
These products are P-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits, gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching regulators, switching converters, motor drivers, and relay drivers. These transistors can be operated directly from integrated circuits. Formerly developmental type TA49203.
| RFD8P06LE, RFD8P06LESM, RFP8P06LE |
UNITS | |
| Drain to Source Voltage (Note 1) VDSS | -60 | V |
| Drain to Gate Voltage (RGS = 1MW) (Note 1)VDGR | -60 | V |
| Continuous Drain Current ID15 | A | |
| TC = 25oC ID |
-8 | |
| TC = 100oC . ID | -6.3 | |
| Pulsed Drain Current (Note 3) IDM | Refer to UIS Curve | A |
| Gate to Source Voltage VGS | ±10 | V |
Power Dissipation PD 25oC |
80 | W |
| Pulsed Avalanche Rating EAS | Figures 6, 16, 17 | |
| Derate above 25oC | 0.533 | A |
| Pulsed Avalanche Rating UIS | Refer to UIS SOA | |
| Operating and Storage Temperature .TJ, TSTG | -55 to 75 | o C |
| Maximum Temperature for Soldering | ||
| Maximum Lead Temperature for Soldering TL (0.063in (1.6mm) from case for 10s) |
300 | o C |
