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RFP8P06E, RFP8P06LE, RFP8P08

RFP8P06E, RFP8P06LE, RFP8P08 Selling Leads, Datasheet

MFG:Intersil  Package Cooled:TO-220  D/C:TO

RFP8P06E, RFP8P06LE, RFP8P08 Picture

RFP8P06E, RFP8P06LE, RFP8P08 Datasheet download

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Part Number: RFP8P06E

 

MFG: Intersil

Package Cooled: TO-220

D/C: TO

 

 

 
 
 
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  • RFP12N10L

  • Vendor: Fairchild D/C: 06+& Qty: 1,000 Note: 04 OEM STK  Adddate: 2026-07-08
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  • ALCON TECHNOLOGY CO., LTD.   China
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  • RFP15P05

  • Vendor: Fairchild D/C: 02+& Note:   Adddate: 2026-07-08
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  • Yes Components Pte Ltd   Singapore
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    (3)

About RFP8P06E

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Datasheet: RFP8P06E

File Size: 89800 KB

Manufacturer: INTERSIL [Intersil Corporation]

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RFP8P06LE Suppliers

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  • RFP12N10L

  • Vendor: Fairchild D/C: 06+& Qty: 1,000 Note: 04 OEM STK  Adddate: 2026-07-08
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  • ALCON TECHNOLOGY CO., LTD.   China
    Contact: Mr.simonzhu  
    Tel: 86-755-83803182
    Fax: --
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  • RFP14N05L

  • Vendor: Fairchild D/C: 06+& Qty: 10,000 Note: 04 OEM STK  Adddate: 2026-07-08
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  • ALCON TECHNOLOGY CO., LTD.   China
    Contact: Mr.simonzhu  
    Tel: 86-755-83803182
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  • RFP1562-20

  • Vendor: Power D/C: 05+& Qty: 5985  Adddate: 2026-07-08
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  • ASK SEMICONDUCTOR LTD   China
    Contact: Mr.Subaninfo@asksemi.com   MSN:asksemiconductor@hotmail.com
    Tel: 86-0755-33060075/0755-29183325/0755-83221176
    Fax: 86-0755-33060076
    (5)
  • RFP15N05

  • Vendor: Fairchild D/C: 03+& Qty: 500  Adddate: 2026-07-08
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  • extra technology limited   China
    Contact: Mr.BecksBao   MSN:baoyaming221@hotmail.com
    Tel: 86-010-62670478
    Fax: 86-010-62670458
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  • RFP15P05

  • Vendor: Fairchild D/C: 02+& Note:   Adddate: 2026-07-08
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  • Yes Components Pte Ltd   Singapore
    Contact: Mr.JosephTan   MSN:josephtan09@hotmail.com
    Tel: 65--67410300
    Fax: 65--67491048
    (3)

About RFP8P06LE

PDF/DataSheet Download

Datasheet: RFP8P06LE

File Size: 105252 KB

Manufacturer: INTERSIL [Intersil Corporation]

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RFP8P08 Suppliers

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  • RFP12N10L

  • Vendor: Fairchild D/C: 06+& Qty: 1,000 Note: 04 OEM STK  Adddate: 2026-07-08
  • Inquire Now
  • ALCON TECHNOLOGY CO., LTD.   China
    Contact: Mr.simonzhu  
    Tel: 86-755-83803182
    Fax: --
    (0)
  • RFP14N05L

  • Vendor: Fairchild D/C: 06+& Qty: 10,000 Note: 04 OEM STK  Adddate: 2026-07-08
  • Inquire Now
  • ALCON TECHNOLOGY CO., LTD.   China
    Contact: Mr.simonzhu  
    Tel: 86-755-83803182
    Fax: --
    (0)
  • RFP1562-20

  • Vendor: Power D/C: 05+& Qty: 5985  Adddate: 2026-07-08
  • Inquire Now
  • ASK SEMICONDUCTOR LTD   China
    Contact: Mr.Subaninfo@asksemi.com   MSN:asksemiconductor@hotmail.com
    Tel: 86-0755-33060075/0755-29183325/0755-83221176
    Fax: 86-0755-33060076
    (5)
  • RFP15N05

  • Vendor: Fairchild D/C: 03+& Qty: 500  Adddate: 2026-07-08
  • Inquire Now
  • extra technology limited   China
    Contact: Mr.BecksBao   MSN:baoyaming221@hotmail.com
    Tel: 86-010-62670478
    Fax: 86-010-62670458
    (0)
  • RFP15P05

  • Vendor: Fairchild D/C: 02+& Note:   Adddate: 2026-07-08
  • Inquire Now
  • Yes Components Pte Ltd   Singapore
    Contact: Mr.JosephTan   MSN:josephtan09@hotmail.com
    Tel: 65--67410300
    Fax: 65--67491048
    (3)

About RFP8P08

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Datasheet: RFP8P08

File Size: 285880 KB

Manufacturer: HARRIS [Harris Corporation]

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RFP8P06E General Description

The RFD20N03 and RFD20N03SM N-Channel power MOSFETs are manufactured using the MegaFET process. This process which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching regulators, switching converters, motor drivers, and relay drivers. These transistors can be operated directly from integrated circuits. Formerly developmental type TA49235.

RFP8P06E Maximum Ratings

  RFD8P06E, RFD8P06ESM, RFP8P06E UNITS
Drain to Source Voltage (Note 1) VDSS -60 V
Drain to Gate Voltage (RGS = 1MW) (Note 1)VDGR -60 V
Continuous (Figure 2)ID 16 A
Pulsed Drain Current (Note 3) IDM Refer to Peak Current Curve A
Gate to Source Voltage VGS ±20 V

Pulsed Drain Current IDM

Refer to UIS Curve
W
Power Dissipation Refer to UIS Curve
Derate above 25oC 0.32 W/oC
Pulsed Avalanche Rating UIS Refer to UIS SOA  
Operating and Storage Temperature .TJ, TSTG -55 to 75 o C
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s TL 300 o C
Package Body for 10s, See Techbrief 334 Tpkg 260 o C

RFP8P06E Features

• 8A, 60V
• rDS(ON) = 0.300W
• Temperature Compensating PSPICE® Model
• 2kV ESD Protected
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• 175oC Operating Temperature
• Related Literature- TB334 "Guidelines for Soldering Surface MountComponents to PC Boards"

RFP8P06LE General Description

These products are P-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits, gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching regulators, switching converters, motor drivers, and relay drivers. These transistors can be operated directly from integrated circuits. Formerly developmental type TA49203.

RFP8P06LE Maximum Ratings

  RFD8P06LE, RFD8P06LESM,
RFP8P06LE
UNITS
Drain to Source Voltage (Note 1) VDSS -60 V
Drain to Gate Voltage (RGS = 1MW) (Note 1)VDGR -60 V
Continuous Drain Current ID15 A
TC = 25oC ID
-8
TC = 100oC . ID -6.3
Pulsed Drain Current (Note 3) IDM Refer to UIS Curve A
Gate to Source Voltage VGS ±10 V

Power Dissipation PD
25oC
80 W
Pulsed Avalanche Rating EAS Figures 6, 16, 17
Derate above 25oC 0.533 A
Pulsed Avalanche Rating UIS Refer to UIS SOA  
Operating and Storage Temperature .TJ, TSTG -55 to 75 o C
Maximum Temperature for Soldering
Maximum Lead Temperature for Soldering TL
(0.063in (1.6mm) from case for 10s)
300 o C

RFP8P06LE Features

• 8A, 60V
• rDS(ON) = 0.300W
• 2kV ESD Protected
• Temperature Compensating PSPICE® Model
• PSPICE Thermal Model
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• 175oC Operating Temperature

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