RMWL26001, RMWL38001, RMWP23001 Selling Leads, Datasheet
MFG:Fairchild Package Cooled:N/A D/C:09+
RMWL26001, RMWL38001, RMWP23001 Datasheet download
Part Number: RMWL26001
MFG: Fairchild
Package Cooled: N/A
D/C: 09+
RMWL26001, RMWL38001, RMWP23001
- Table of contents:
Info of RMWL26001
Info of RMWL38001
Info of RMWP23001
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About RMWB04001
PDF/DataSheet Download
Datasheet: RMWB04001
File Size: 114751 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
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About RMWL38001
PDF/DataSheet Download
Datasheet: RMWL38001
File Size: 392059 KB
Manufacturer: ETC [ETC]
Download : Click here to Download
About RMWP23001
PDF/DataSheet Download
Datasheet: RMWP23001
File Size: 303245 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
RMWL38001 General Description
The RMWL38001 is a 4-stage GaAs MMIC amplifier designed as a 37 to 40 GHz Low Noise Amplifier for use in
point to point radios, point to multi-point communications, LMDS, and other millimeter wave applications. In
conjunction with other Raytheon amplifiers, multipliers and mixers it forms part of a complete 38 GHz
transmit/receive chipset. The RMWL38001 utilizes Raytheon's 0.25m power PHEMT process and is sufficiently
versatile to serve in a variety of low noise amplifier applications.
point to point radios, point to multi-point communications, LMDS, and other millimeter wave applications. In
conjunction with other Raytheon amplifiers, multipliers and mixers it forms part of a complete 38 GHz
transmit/receive chipset. The RMWL38001 utilizes Raytheon's 0.25m power PHEMT process and is sufficiently
versatile to serve in a variety of low noise amplifier applications.
RMWL38001 Maximum Ratings
| Parameter | Symbol | Value | Unit |
| Positive DC voltage (+4 V Typical) | Vd | +6 | Volts |
| Negative DC voltage | Vg | -2 | Volts |
| Simultaneous (Vd - Vg) | Vdg | 8 | Volts |
| Positive DC current | ID | 75 | mA |
| RF Input Power (from 50 source) | PIN | +6 | dBm |
| Operating Baseplate Temperature | TC | -30 to +85 | |
| Storage Temperature Range | Tstg | -55 to +125 | |
| Thermal Resistance (Channel to Backside) |
RJC | 169 | /W |
RMWL38001 Features
· 4 mil substrate
· Noise figure 2.7 dB (typ.)
· Small-signal gain 22 dB (typ.)
· 1dB compressed Pout 13.5 dBm (typ.)
· Chip size 2.9 mm x 1.25 mm
· Noise figure 2.7 dB (typ.)
· Small-signal gain 22 dB (typ.)
· 1dB compressed Pout 13.5 dBm (typ.)
· Chip size 2.9 mm x 1.25 mm
RMWP23001 General Description
The RMWP23001 is a 4-stage GaAs MMIC amplifier designed as a 21 to 24 GHz Power Amplifier for use in point to point and point to multi-point radios, and various communications applications. In conjunction with other Fairchild Semiconductor amplifiers, multipliers and mixers it forms part of a complete 23 GHz transmit/receive chipset.
The RMWP23001 utilizes our 0.25m power PHEMT process and is sufficiently versatile to serve in a variety of power amplifier applications.
RMWP23001 Maximum Ratings
| Symbol | Parameter | Ratings | Units |
| Vd | Positive DC Voltage (+4V Typical) | +6 | V |
| Vg | Negative DC Voltage | -2 | V |
| Vdg | Simultaneous (VdVg) | 8 | V |
| ID |
Positive DC Current |
607 | mA |
| PIN | RF Input Power (from 50 source) |
+8 | dBm |
| TC |
Operating Baseplate Temperature | -30 to +85 | |
| TSTG |
Storage Temperature Range | -55 to +125 | |
| RJC | Thermal Resistance (Channel to Backside) | 36.5 | /W |
RMWP23001 Features
• 4mil substrate
• Small-signal gain 22.5dB (typ.)
• 1dB compressed Pout 23.5dBm (typ.)
• Chip size 2.6mm x 1.2mm
• Small-signal gain 22.5dB (typ.)
• 1dB compressed Pout 23.5dBm (typ.)
• Chip size 2.6mm x 1.2mm
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