RMWB12001, RMWB24001, RMWB33001 Selling Leads, Datasheet
MFG:Fairchild Package Cooled:N/A D/C:09+
RMWB12001, RMWB24001, RMWB33001 Datasheet download
Part Number: RMWB12001
MFG: Fairchild
Package Cooled: N/A
D/C: 09+
RMWB12001, RMWB24001, RMWB33001
- Table of contents:
Info of RMWB12001
Info of RMWB24001
Info of RMWB33001
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About RMWB12001
PDF/DataSheet Download
Datasheet: RMWB12001
File Size: 206656 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
About RMWB24001
PDF/DataSheet Download
Datasheet: RMWB24001
File Size: 100965 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
About RMWB33001
PDF/DataSheet Download
Datasheet: RMWB33001
File Size: 240118 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
RMWB12001 General Description
The RMWB12001 is a 3-stage GaAs MMIC amplifier designed as an 8.5 to 12 GHz Buffer Amplifier for use in point to point and point to multi-point radios, and various communications applications. In conjunction with other Fairchild RF amplifiers, multipliers and mixers it forms part of a complete 23 and 26 GHz transmit/receive chipset. The RMWB12001 utilizes our 0.25m power PHEMT process and is sufficiently versatile to serve in a variety of medium power amplifier applications.
RMWB12001 Maximum Ratings
| Symbol | Parameter | Ratings | Units |
| Vd | Positive DC Voltage (+4V Typical) | +6 | V |
| Vg | Negative DC Voltage | -2 | V |
| Vdg | Simultaneous (VdVg) | 8 | V |
| ID |
Positive DC Current |
207 | mA |
| PIN | RF Input Power (from 50 source) |
+8 | dBm |
| TC |
Operating Baseplate Temperature | -30 to +85 | |
| TSTG |
Storage Temperature Range | -55 to +125 | |
| RJC | Thermal Resistance (Channel to Backside) | 120 | /W |
RMWB12001 Features
• 4 mil Substrate
• Small-signal Gain 25dB (typ.)
• 3dB compressed Pout 21dBm (typ.)
• Voltage Detector Included to Monitor Pout
• Chip size 2.2mm x 1.7mm
• Small-signal Gain 25dB (typ.)
• 3dB compressed Pout 21dBm (typ.)
• Voltage Detector Included to Monitor Pout
• Chip size 2.2mm x 1.7mm
RMWB24001 General Description
The RMWB24001 is a 3-stage GaAs MMIC amplifier designed as an 17 to 24 GHz Buffer Amplifier for use in point to point and point to multi-point radios, and various communications applications. In conjunction with other amplifiers, multipliers and mixers it forms part of a complete 23 and 26 GHz transmit/receive chipset. The RMWB24001 utilizes our 0.25m power PHEMT process and is sufficiently versatile to serve in a variety of medium power amplifier applications.
RMWB24001 Maximum Ratings
| Symbol | Parameter | Ratings | Units |
| Vd | Positive DC Voltage (+4V Typical) | +6 | V |
| Vg | Negative DC Voltage | -2 | V |
| Vdg | Simultaneous (VdVg) | 8 | V |
| ID |
Positive DC Current |
110 | mA |
| PIN | RF Input Power (from 50 source) |
+11 | dBm |
| TC |
Operating Baseplate Temperature | -30 to +85 | |
| TSTG |
Storage Temperature Range | -55 to +125 | |
| RJC | Thermal Resistance (Channel to Backside) | 148 | /W |
RMWB24001 Features
• 4 mil Substrate
• Small-signal Gain 25dB (typ.)
• Saturated Power Out 17dBm (typ.)
• Voltage Detector Included to Monitor Pout
• Chip size 2.5mm x 1.5mm x 100m
• Small-signal Gain 25dB (typ.)
• Saturated Power Out 17dBm (typ.)
• Voltage Detector Included to Monitor Pout
• Chip size 2.5mm x 1.5mm x 100m
RMWB33001 General Description
The RMWB33001 is a 4-stage GaAs MMIC amplifier designed as a 33 GHz Buffer Amplifier for use in point to point and point to multi-point radios, and various communications applications. In conjunction with other Fairchild RF amplifiers, multipliers and mixers it forms part of a complete 38 GHz transmit/receive chipset. The RMWB33001 utilizes our 0.25m power PHEMT process and is sufficiently versatile to serve in a variety of medium power amplifier applications.
RMWB33001 Maximum Ratings
| Symbol | Parameter | Ratings | Units |
| Vd | Positive DC Voltage (+4V Typical) | +6 | V |
| Vg | Negative DC Voltage | -2 | V |
| Vdg | Simultaneous (VdVg) | 8 | V |
| ID |
Positive DC Current |
173 | mA |
| PIN | RF Input Power (from 50 source) |
+8 | dBm |
| TC |
Operating Baseplate Temperature | -30 to +85 | |
| TSTG |
Storage Temperature Range | -55 to +125 | |
| RJC | Thermal Resistance (Channel to Backside) | 130 | /W |
RMWB33001 Features
• 4 mil Substrate
• Small-signal Gain 24dB (typ.)
• Saturated Power Out 19dBm (typ.)
• Voltage Detector Included to Monitor Pout
• Chip size 3.2mm x 1.2mm
• Small-signal Gain 24dB (typ.)
• Saturated Power Out 19dBm (typ.)
• Voltage Detector Included to Monitor Pout
• Chip size 3.2mm x 1.2mm
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