RMWL38001

Features:

· 4 mil substrate
· Noise figure 2.7 dB (typ.)
· Small-signal gain 22 dB (typ.)
· 1dB compressed Pout 13.5 dBm (typ.)
· Chip size 2.9 mm x 1.25 mm


Specifications

Parameter	Symbol	Value	Unit
Positive DC voltage (+4 V Typical)	Vd	+6	Volts
Negative DC voltage	Vg	-2	Volts
Simultaneous (Vd - Vg)	Vdg	8	Volts
Positive DC current	ID	75	mA
RF Input Power (from 50 source)	PIN	+6	dBm
Operating Baseplate Temperature	TC	-30 to +85
Storage Temperature Range	Tstg	-55 to +125
Thermal Resistance (Channel to Backside)	RJC	169	/W

Description

The RMWL38001 is a 4-stage GaAs MMIC amplifier designed as a 37 to 40 GHz Low Noise Amplifier for use in
point to point radios, point to multi-point communications, LMDS, and other millimeter wave applications. In
conjunction with other Raytheon amplifiers, multipliers and mixers it forms part of a complete 38 GHz
transmit/receive chipset. The RMWL38001 utilizes Raytheon's 0.25m power PHEMT process and is sufficiently
versatile to serve in a variety of low noise amplifier applications.