RT9600, RT9600CS, RT9602 Selling Leads, Datasheet
MFG:SOP8 Package Cooled:RichTek D/C:04+
RT9600, RT9600CS, RT9602 Datasheet download
Part Number: RT9600
MFG: SOP8
Package Cooled: RichTek
D/C: 04+
RT9600, RT9600CS, RT9602
- Table of contents:
Info of RT9600
Info of RT9600CS
Info of RT9602
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About RT9600
PDF/DataSheet Download
Datasheet: RT9600
File Size: 158186 KB
Manufacturer: ETC [ETC]
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About RT9600CS
PDF/DataSheet Download
Datasheet: RT9600CS
File Size: 158186 KB
Manufacturer: ETC [ETC]
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About RT9602
PDF/DataSheet Download
Datasheet: RT9602
File Size: 170784 KB
Manufacturer: ETC [ETC]
Download : Click here to Download
RT9600 General Description
The RT9600 is a high frequency, dual MOSFET driver specifically designed to drive two power NChannel MOSFETs in a synchronous-rectified buck converter topology. This driver combined with a RT9237 Multi-Phase Buck PWM controller form a complete core-voltage regulator solution for advanced microprocessors.
The RT9600 drives both the lower/upper gate in a synchronous-rectifier bridge to 12V. Independent driving of upper gate through PVCC pin is achievable. Recommended PVCC ranges are from 8 to 12V for Rds(on) concern. This drive-voltage flexibility provides the advantage of optimizing applications involving trade-offs between switching losses and conduction losses.
The output drivers in the RT9600 have the capacity to efficiently switch power MOSFETs at frequencies up to 2MHz. Each driver is capable of driving a 3000pF load with a 30ns propagation delay and 50ns transition time. RT9600 implements bootstrapping on the upper gate with only an external capacitor required. This reduces
implementation complexity and allows the use of higher performance, cost effective, N-Channel MOSFETs. Adaptive shoot-through protection is integrated to prevent both MOSFETs from conducting simultaneously.
The RT9600 drives both the lower/upper gate in a synchronous-rectifier bridge to 12V. Independent driving of upper gate through PVCC pin is achievable. Recommended PVCC ranges are from 8 to 12V for Rds(on) concern. This drive-voltage flexibility provides the advantage of optimizing applications involving trade-offs between switching losses and conduction losses.
The output drivers in the RT9600 have the capacity to efficiently switch power MOSFETs at frequencies up to 2MHz. Each driver is capable of driving a 3000pF load with a 30ns propagation delay and 50ns transition time. RT9600 implements bootstrapping on the upper gate with only an external capacitor required. This reduces
implementation complexity and allows the use of higher performance, cost effective, N-Channel MOSFETs. Adaptive shoot-through protection is integrated to prevent both MOSFETs from conducting simultaneously.
RT9600 Maximum Ratings
` Supply Voltage (VCC)............... 12V
` Supply Voltage (PVCC).......... VCC + 0.3V
` BOOT Voltage................... 12V
` Input............ Voltage GND 0.3V to 7V
` UGATE........ VPHASE 0.3V to VBOOT + 0.3V
` LGATE..........GND 0.3V To VPVCC + 0.3V
` EDS Level
HBM........................ 2KV
MM ........................200V
` Power Dissipation, PD @ TA = 25°C
SOP-8..................... 0.625W
` Package Thermal Resistance
SOP-8, JA.................160°C /W
` Ambient Temperature Range...... 0°C ~ 85°C
` Operating Junction Temperature........125°C
` Lead Temperature (Soldering, 10 sec.).....300°C
` Storage Temperature Range............ -65°C ~ 150°C
` Supply Voltage (PVCC).......... VCC + 0.3V
` BOOT Voltage................... 12V
` Input............ Voltage GND 0.3V to 7V
` UGATE........ VPHASE 0.3V to VBOOT + 0.3V
` LGATE..........GND 0.3V To VPVCC + 0.3V
` EDS Level
HBM........................ 2KV
MM ........................200V
` Power Dissipation, PD @ TA = 25°C
SOP-8..................... 0.625W
` Package Thermal Resistance
SOP-8, JA.................160°C /W
` Ambient Temperature Range...... 0°C ~ 85°C
` Operating Junction Temperature........125°C
` Lead Temperature (Soldering, 10 sec.).....300°C
` Storage Temperature Range............ -65°C ~ 150°C
RT9600 Features
· Drives Two N-Channel MOSFETs
· Adaptive Shoot-Through Protection
· Internal Bootstrap Device
· Supports High Switching Frequency
− Fast Output Rise Time
− Propagation Delay 30ns
· Small SOP-8 Package
· Dual Gate-Drive Voltages for Optimal Efficiency
· Three-State Input for Bridge Shutdown
· Supply Under Voltage Protection
· High Side Short Circuit Protection
RT9600 Typical Application
· Core Voltage Supplies for Intel Pentium® 4, AMD® AthlonTM Microprocessors
· High Frequency Low Profile DC-DC Converters
· High Current Low Voltage DC-DC Converters
· High Frequency Low Profile DC-DC Converters
· High Current Low Voltage DC-DC Converters
RT9600 Connection Diagram
RT9602 General Description
The RT9602 is a dual power channel MOSFET driver specifically designed to drive four power N-Channel MOSFETs in a synchronous-rectified buck converter topology. These drivers combined with RT9237/A and RT9241A/B series of Multi-Phase Buck PWM controllers provide a complete core voltage regulator solution for advanced microprocessors.
The RT9602 can provide flexible gate driving for both high side and low side drivers. This gives more flexibility of MOSFET selection.
The output drivers in the RT9602 have the capability to drive a 3000pF load with a 40nS propagation delay and 80nS transition time. This device implements bootstrapping on the upper gates with only a single external capacitor required for each power channel. This reduces implementation complexity and allows the use of higher performance, cost effective, N-Channel MOSFETs. Adaptive shoot-through protect-ion is integrated to prevent both MOSFETs from conducting simultaneously.
The RT9602 can detect high side MOSFET drain-to-source electrical short at power on and pull the 12V power by low side MOS and cause power supply to go into over current shutdown to prevent damage of CPU.
The RT9602 can provide flexible gate driving for both high side and low side drivers. This gives more flexibility of MOSFET selection.
The output drivers in the RT9602 have the capability to drive a 3000pF load with a 40nS propagation delay and 80nS transition time. This device implements bootstrapping on the upper gates with only a single external capacitor required for each power channel. This reduces implementation complexity and allows the use of higher performance, cost effective, N-Channel MOSFETs. Adaptive shoot-through protect-ion is integrated to prevent both MOSFETs from conducting simultaneously.
The RT9602 can detect high side MOSFET drain-to-source electrical short at power on and pull the 12V power by low side MOS and cause power supply to go into over current shutdown to prevent damage of CPU.
RT9602 Maximum Ratings
` Supply Voltage (VCC)...............15V
` Supply Voltage (PVCC) .......... VCC + 0.3V
` BOOT Voltage (VBOOT-VPHASE) ..........15V
` Input Voltage (VPWM) ........GND0.3V to 7V
` UGATE..........VPHASE-0.3V to VBOOT+0.3V
` LGATE............GND-0.3V to VPVCC+0.3V
` Package Thermal Resistance
SOP-14, JA ................160°C /W
` Ambient Temperature.......... 0°C ~ 70°C
` Junction Temperature..........0°C ~ 125°C
` Storage Temperature Range .....-40°C ~ 150°C
` Lead Temperature (Soldering, 10 sec.).....260°C
` ESD Level
HBM........................ 2KV
MM........................ 200V
` Supply Voltage (PVCC) .......... VCC + 0.3V
` BOOT Voltage (VBOOT-VPHASE) ..........15V
` Input Voltage (VPWM) ........GND0.3V to 7V
` UGATE..........VPHASE-0.3V to VBOOT+0.3V
` LGATE............GND-0.3V to VPVCC+0.3V
` Package Thermal Resistance
SOP-14, JA ................160°C /W
` Ambient Temperature.......... 0°C ~ 70°C
` Junction Temperature..........0°C ~ 125°C
` Storage Temperature Range .....-40°C ~ 150°C
` Lead Temperature (Soldering, 10 sec.).....260°C
` ESD Level
HBM........................ 2KV
MM........................ 200V
RT9602 Features
· Drives Four N-Channel MOSFETs
· Adaptive Shoot-Through Protection
· Internal Bootstrap Devices
· Small 14-Lead SOIC Package
· 5V to 12V Gate-Drive Voltages for Optimal Efficiency
· Tri-State Input for Bridge Shutdown
· Supply Under-Voltage Protection
· Power ON Over-Voltage Protection
· Adaptive Shoot-Through Protection
· Internal Bootstrap Devices
· Small 14-Lead SOIC Package
· 5V to 12V Gate-Drive Voltages for Optimal Efficiency
· Tri-State Input for Bridge Shutdown
· Supply Under-Voltage Protection
· Power ON Over-Voltage Protection
RT9602 Typical Application
· Core Voltage Supplies for Intel Pentium® 4 and AMD® AthlonTM Microprocessors
· High Frequency Low Profile DC-DC Converters
· High Current Low Voltage DC-DC Converters
· High Frequency Low Profile DC-DC Converters
· High Current Low Voltage DC-DC Converters
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