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RTQ035P02 TR, RTQ040P02, RTQ040P02TR

Table of contents:
Info of RTQ035P02 TR
Info of RTQ040P02
Info of RTQ040P02TR

RTQ035P02 TR, RTQ040P02, RTQ040P02TR Selling Leads, Datasheet

MFG:Rohm Semiconductor Category:Discrete Semiconductor Products Package Cooled:www.dayue-hk.com D/C:09+ ROHS

RTQ035P02 TR, RTQ040P02, RTQ040P02TR Datasheet download

Five Points

Part Number: RTQ040P02TR

Category: Discrete Semiconductor Products

MFG: Rohm Semiconductor

Package Cooled: www.dayue-hk.com

D/C: 09+ ROHS

Description: MOSFET P-CH 20V 4A TSMT6

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RTQ040P02 Maximum Ratings

Parameter		Symbol	Limits	Unit
Drain-Source Voltage		V_DSS	-20	V
Gate-Source Voltage		V_GSS	±12	V
Drain Current	Continuous	I_D	±4.0	A
Drain Current	Pulsed	I_DP	±16	A `1
Source Current (Body Diode)	Continuous	I_s	-1	A `1
Source Current (Body Diode)	Pulsed	I_sp	-16	A
Total Power Dissipation		P_D	1.25	W `2
Channel Temperature		T_ch	150	°C
Range of Storage temperature		T_stg	-55 to +150	°C

`1 Pw10s, Duty cycle1%

`2 Mounted on a ceramic board.

RTQ040P02 Features

1) Low on-resistance. (110mΩ at 2.5V)
2) High power package.
3) High speed switching.
4) Low voltage drive. (2.5V)

RTQ040P02 Typical Application

DC-DC converter

RTQ040P02TR Parameters

Technical/Catalog Information	RTQ040P02TR
Vendor	Rohm Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	P-Channel
Drain to Source Voltage (Vdss)	20V
Current - Continuous Drain (Id) @ 25° C	4A
Rds On (Max) @ Id, Vgs	50 mOhm @ 4A, 4.5V
Input Capacitance (Ciss) @ Vds	1350pF @ 10V
Power - Max	1.25W
Packaging	Tape & Reel (TR)
Gate Charge (Qg) @ Vgs	12.2nC @ 4.5V
Package / Case	TSMT6
FET Feature	Logic Level Gate
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	RTQ040P02TR RTQ040P02TR

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