MOSFET P-CH 20V 3A TSMT6
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| Transistor Polarity : | P-Channel | Drain-Source Breakdown Voltage : | - 20 V |
| Gate-Source Breakdown Voltage : | +/- 12 V | Continuous Drain Current : | +/- 3 A |
| Resistance Drain-Source RDS (on) : | 0.11 Ohms | Configuration : | Single |
| Mounting Style : | SMD/SMT | Package / Case : | TSMT-6 |
| Packaging : | Reel |
| Parameter | Symbol | Limits | Unit | |
| Drain-Source Voltage | VDSS | -20 | V | |
| Gate-Source Voltage | VGSS | ±12 | V | |
| Drain Current | Continuous | ID | ±3 | A |
| Pulsed | IDP | ±12 | A `1 | |
| Source Current (Body Diode) | Continuous | Is | -1 | A |
| Pulsed | Isp | -4 | A `1 | |
| Total Power Dissipation | PD | 1.25 | W `2 | |
| Channel Temperature | Tch | 150 | °C | |
| Storage Temperature | Tstg | -55 to +150 | °C | |
`?1 Pw10s, Duty cycle1%
`?2 Mounted on a ceramic board.
| Technical/Catalog Information | RTQ030P02TR |
| Vendor | Rohm Semiconductor(VA) |
| Category | Discrete Semiconductor Products |
| Mounting Type | Surface Mount |
| FET Polarity | P-Channel |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25° C | 3A |
| Rds On (Max) @ Id, Vgs | 80 mOhm @ 3A, 4.5V |
| Input Capacitance (Ciss) @ Vds | 800pF @ 10V |
| Power - Max | 1.25W |
| Packaging | Digi-Reel? |
| Gate Charge (Qg) @ Vgs | 9nC @ 4.5V |
| Package / Case | TSMT6 |
| FET Feature | Logic Level Gate |
| Drawing Number | * |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | RTQ030P02TR RTQ030P02TR RTQ030P02DKR ND RTQ030P02DKRND RTQ030P02DKR |