MOSFET N-CH 30V 2A TSMT6
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| Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 30 V |
| Gate-Source Breakdown Voltage : | +/- 12 V | Continuous Drain Current : | 2 A |
| Resistance Drain-Source RDS (on) : | 0.138 Ohms | Configuration : | Single Quad Drain |
| Mounting Style : | SMD/SMT | Package / Case : | TSMT-6 |
| Packaging : | Reel |
| Technical/Catalog Information | RTQ020N03TR |
| Vendor | Rohm Semiconductor(VA) |
| Category | Discrete Semiconductor Products |
| Mounting Type | Surface Mount |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25° C | 2A |
| Rds On (Max) @ Id, Vgs | 125 mOhm @ 2A, 4.5V |
| Input Capacitance (Ciss) @ Vds | 135pF @ 10V |
| Power - Max | 1.25W |
| Packaging | Digi-Reel? |
| Gate Charge (Qg) @ Vgs | 3.3nC @ 4.5V |
| Package / Case | TSMT6 |
| FET Feature | Standard |
| Drawing Number | * |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | RTQ020N03TR RTQ020N03TR RTQ020N03DKR ND RTQ020N03DKRND RTQ020N03DKR |