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Surge non repetitive forward current, sine halfwave TC=25, tp=10ms
IFSM
12.5
Repetitive peak forward current Tj=150, TC=100, D=0.1
IFRM
18
Non repetitive peak forward current tp=10µs, TC=25
IFMAX
40
i 2t value, TC=25, tp=10ms
i2dt
0.78
A²s
Repetitive peak reverse voltage
VRRM
600
V
Surge peak reverse voltage
VRSM
600
Power dissipation, TC=25
Ptot
36.5
W
Operating and storage temperature
Tj , Tstg
-55... +175
SDP04S60 Features
• Worlds first 600V Schottky diode • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark • No reverse recovery • No temperature influence on the switching behavior • Ideal diode for Power Factor Correction up to 800W1) • No forward recovery
SDP06S60 Parameters
Technical/Catalog Information
SDP06S60
Vendor
Infineon Technologies
Category
Discrete Semiconductor Products
Diode Type
Silicon Carbide
Voltage - DC Reverse (Vr) (Max)
600V
Current - Average Rectified (Io)
6A (DC)
Voltage - Forward (Vf) (Max) @ If
1.7V @ 6A
Reverse Recovery Time (trr)
0ns
Current - Reverse Leakage @ Vr
200A @ 600V
Speed
No Recovery Time > 500mA (Io)
Mounting Type
Through Hole, Radial
Package / Case
TO-220AB
Packaging
Tube
Capacitance @ Vr, F
300pF @ 0V, 1MHz
Lead Free Status
Contains Lead
RoHS Status
RoHS Non-Compliant
Other Names
SDP06S60 SDP06S60
SDP06S60 Maximum Ratings
Parameter
Symbol
Value
Unit
Continuous forward current, TC=100°C
IF
6
A
RMS forward current, f=50Hz
IFRMS
8.4
Surge non repetitive forward current, sine halfwave TC=25°C, tp=10ms
IFSM
21.5
Repetitive peak forward current Tj=150°C, TC=100°C, D=0.1
IFRM
28
Non repetitive peak forward current tp=10µs, TC=25°C