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SDP/B60N03L

Features: S uper high dense cell design for extremely low R DS (ON).High power and current handling capability.TO-220 & TO-263 package.Specifications Parameter Symbol Limit Unit Drain-S ource Voltage VDS 30 V Gate-S ource Voltage VGS ±20 V Drain Current-Continuous @ TJ=125 -...

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SDP/B60N03L: Features: S uper high dense cell design for extremely low R DS (ON).High power and current handling capability.TO-220 & TO-263 package.Specifications Parameter Symbol Limit Unit Drain-S o...

SDP/B60N03L Data Sheet

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Part Number:
SDP/B60N03L
Supply Ability:
5000

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  • 1~5000
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  • 15 Days
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Upload time: 2024/4/27

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Product Details

Description



Features:

S uper high dense cell design for extremely low R DS (ON).
High power and current handling capability.
TO-220 & TO-263 package.


Specifications

Parameter Symbol Limit Unit
Drain-S ource Voltage VDS 30 V
Gate-S ource Voltage VGS ±20 V
Drain Current-Continuous @ TJ=125 -Pulseda ID 56 A
IDM 168 A
Drain-S ource Diode Forward Current IS 60 A
Maximum Power Dissipation @ Tc=25 PD 75 W
Operating and S torage Temperature R ange TJ , TSTG -65 to 175
THE RMAL CHAR ACTE R IS TICS
Thermal R esistance, Junction-to-Case R JC 2.5 /W
Thermal R esistance, Junction-to-Ambient R JA 62.5 /W



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