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SETB, SETD, SETE

SETB, SETD, SETE Selling Leads, Datasheet

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SETB, SETD, SETE Datasheet download

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Part Number: SETB

 

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About SETB

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Datasheet: SETB

File Size: 49249 KB

Manufacturer: EIC [EIC discrete Semiconductors]

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SETD Suppliers

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About SETD

PDF/DataSheet Download

Datasheet: SETD

File Size: 49249 KB

Manufacturer: EIC [EIC discrete Semiconductors]

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About SETE

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Datasheet: SETE

File Size: 49249 KB

Manufacturer: EIC [EIC discrete Semiconductors]

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SETB Maximum Ratings

Rating at 25 °C ambient temperature unless otherwise specified.Single phase, half wave, 60 Hz, resistive or inductive load.For capacitive load, derate current by 20%.

  Symbols SETA SETB SETD SETE SETG SETJ SETK SETM Units
Maximum repetitive peak reverse voltage
VRRM
50
100
200
300
400
600
800
1000
Volts
Maximum RMS voltage
VRMS
35
70
140
210
280
420
560
700
Volts
Maximum DC blocking voltage
VDC
50
100
200
300
400
600
800
1000
Volts
Maximum average forward rectified current
TA=55
IF(AV)
2.5
Amps
Peak forward surge current
8.3mS single half sine-wave superimposed
on rated load (JEDEC Method)
IFSM
100
Amps
Maximum instantaneous forward voltage at 1.0A
VF
1.1
1.7
Volts
Maximum DC reverse current TA=25
at rated DC blocking voltage TA=100
IR
10
A
IR(H)

50

A
Maximum Reverse recovery time (Note 1)
Trr
50
75
nS
Typical junction capacitance (Note 2)
CJ
50.0
pF
Junction temperature range
TJ
-65to+150
storage temperature range
TSTG
-65to+150
Notes :
( 1 ) Reverse Recovery Test Conditions : IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A.
( 2 ) Measured at 1.0 MHz and applied reverse voltage of 4.0 VDC

SETB Features

* High current capability
* High surge current capability
* High reliability
* Low reverse current
* Low forward voltage drop
* Fast switching for high efficiency

SETD Maximum Ratings

Rating at 25 °C ambient temperature unless otherwise specified.Single phase, half wave, 60 Hz, resistive or inductive load.For capacitive load, derate current by 20%.

  Symbols SETA SETB SETD SETE SETG SETJ SETK SETM Units
Maximum repetitive peak reverse voltage
VRRM
50
100
200
300
400
600
800
1000
Volts
Maximum RMS voltage
VRMS
35
70
140
210
280
420
560
700
Volts
Maximum DC blocking voltage
VDC
50
100
200
300
400
600
800
1000
Volts
Maximum average forward rectified current
TA=55
IF(AV)
2.5
Amps
Peak forward surge current
8.3mS single half sine-wave superimposed
on rated load (JEDEC Method)
IFSM
100
Amps
Maximum instantaneous forward voltage at 1.0A
VF
1.1
1.7
Volts
Maximum DC reverse current TA=25
at rated DC blocking voltage TA=100
IR
10
A
IR(H)

50

A
Maximum Reverse recovery time (Note 1)
Trr
50
75
nS
Typical junction capacitance (Note 2)
CJ
50.0
pF
Junction temperature range
TJ
-65to+150
storage temperature range
TSTG
-65to+150
Notes :
( 1 ) Reverse Recovery Test Conditions : IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A.
( 2 ) Measured at 1.0 MHz and applied reverse voltage of 4.0 VDC

SETD Features

* High current capability
* High surge current capability
* High reliability
* Low reverse current
* Low forward voltage drop
* Fast switching for high efficiency

SETE Maximum Ratings

Rating at 25 °C ambient temperature unless otherwise specified.Single phase, half wave, 60 Hz, resistive or inductive load.For capacitive load, derate current by 20%.

  Symbols SETA SETB SETD SETE SETG SETJ SETK SETM Units
Maximum repetitive peak reverse voltage
VRRM
50
100
200
300
400
600
800
1000
Volts
Maximum RMS voltage
VRMS
35
70
140
210
280
420
560
700
Volts
Maximum DC blocking voltage
VDC
50
100
200
300
400
600
800
1000
Volts
Maximum average forward rectified current
TA=55
IF(AV)
2.5
Amps
Peak forward surge current
8.3mS single half sine-wave superimposed
on rated load (JEDEC Method)
IFSM
100
Amps
Maximum instantaneous forward voltage at 1.0A
VF
1.1
1.7
Volts
Maximum DC reverse current TA=25
at rated DC blocking voltage TA=100
IR
10
A
IR(H)

50

A
Maximum Reverse recovery time (Note 1)
Trr
50
75
nS
Typical junction capacitance (Note 2)
CJ
50.0
pF
Junction temperature range
TJ
-65to+150
storage temperature range
TSTG
-65to+150
Notes :
( 1 ) Reverse Recovery Test Conditions : IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A.
( 2 ) Measured at 1.0 MHz and applied reverse voltage of 4.0 VDC

SETE Features

* High current capability
* High surge current capability
* High reliability
* Low reverse current
* Low forward voltage drop
* Fast switching for high efficiency

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