SFB62622, SFB7, SFB95N03L Selling Leads, Datasheet
MFG:(AVAGO) Package Cooled:QFN D/C:07+
SFB62622, SFB7, SFB95N03L Datasheet download
Part Number: SFB62622
MFG: (AVAGO)
Package Cooled: QFN
D/C: 07+
SFB62622, SFB7, SFB95N03L
- Table of contents:
Info of SFB62622
Info of SFB7
Info of SFB95N03L
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About SFB95N03L
PDF/DataSheet Download
Datasheet: SFB95N03L
File Size: 1216344 KB
Manufacturer: SEMIWELL [SemiWell Semiconductor]
Download : Click here to Download
About SFB95N03L
PDF/DataSheet Download
Datasheet: SFB95N03L
File Size: 1216344 KB
Manufacturer: SEMIWELL [SemiWell Semiconductor]
Download : Click here to Download
About SFB95N03L
PDF/DataSheet Download
Datasheet: SFB95N03L
File Size: 1216344 KB
Manufacturer: SEMIWELL [SemiWell Semiconductor]
Download : Click here to Download
SFB95N03L General Description
This Power MOSFET is produced using SemiWell's advanced planar stripe, DMOS technology. This latest technology has been especially designed to minimize on-state resistance, have a low gate charge with superior switching performance, and rugged avalanche characteristics. This Power MOSFET is well suited for synchronous DC-DC Converters and Power Management in portable and battery operated products.
SFB95N03L Maximum Ratings
|
Symbol |
Parameter |
Ratings |
Units |
|
VDSS |
Drain to Source Voltage |
30 |
V |
|
VGS |
Gate to Source Voltage |
±20 |
V |
|
ID |
Continuous Drain Current(@TC = 25°C) |
95 |
A |
| Continuous Drain Current(@TC = 100°C) |
67.3 | ||
|
IDM |
Drain Current Pulsed |
380 | |
|
EAS |
Single Pulse Avalanche Energy |
450 |
mJ |
|
dv/dt |
Peak Diode Recovery dv/dt |
7.0 |
V/ns |
|
PD |
Total Power Dissipation(@TA = 25 °C) |
3.75 |
W |
| Total Power Dissipation(@TC = 25 °C) Derating Factor above 25 °C |
150 |
W | |
|
1.0 |
W/°C | ||
|
TJ,TSTG |
Operating and Storage Temperature |
-55 to 175 |
°C |
|
TL |
Maximum Lead Temperature for soldering purpose, 1/8 from Case for 5 seconds. |
300 |
°C |
SFB95N03L Features
Low RDS(on) (0.0085 )@VGS=10V
Low Gate Charge (Typical 39nC)
Low Crss (Typical 185pF)
Improved dv/dt Capability
100% Avalanche Tested
Maximum Junction Temperature Range (175°C)
Low Gate Charge (Typical 39nC)
Low Crss (Typical 185pF)
Improved dv/dt Capability
100% Avalanche Tested
Maximum Junction Temperature Range (175°C)
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