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SFB95N03L

Features: Low RDS(on) (0.0085 )@VGS=10V Low Gate Charge (Typical 39nC) Low Crss (Typical 185pF) Improved dv/dt Capability 100% Avalanche Tested Maximum Junction Temperature Range (175°C)Specifications Symbol Parameter Ratings Units VDSS Drain to Source Voltage 30 V ...

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SFB95N03L: Features: Low RDS(on) (0.0085 )@VGS=10V Low Gate Charge (Typical 39nC) Low Crss (Typical 185pF) Improved dv/dt Capability 100% Avalanche Tested Maximum Junction Temperature Range (175°C)Specificati...

SFB95N03L Data Sheet

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Part Number:
SFB95N03L
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

Low RDS(on) (0.0085 )@VGS=10V
Low Gate Charge (Typical 39nC)
Low Crss (Typical 185pF)
Improved dv/dt Capability
100% Avalanche Tested
Maximum Junction Temperature Range (175°C)


Specifications

Symbol
Parameter
Ratings
Units
VDSS
 Drain to Source Voltage
30
V
VGS
 Gate to Source Voltage
±20
V
ID
 Continuous Drain Current(@TC = 25°C)
95
A
Continuous Drain Current(@TC = 100°C)
67.3
IDM
 Drain Current Pulsed
380
EAS
 Single Pulse Avalanche Energy
450
mJ
dv/dt
 Peak Diode Recovery dv/dt
7.0
V/ns
PD
 Total Power Dissipation(@TA = 25 °C)
3.75
W
Total Power Dissipation(@TC = 25 °C)
Derating Factor above 25 °C
150
W
1.0
W/°C
TJ,TSTG
 Operating and Storage Temperature
-55 to 175
°C
TL
 Maximum Lead Temperature for soldering purpose, 1/8 from Case for 5 seconds.
300
°C



Description

This Power MOSFET SFB95N03L is produced using SemiWell's advanced planar stripe, DMOS technology. This latest technology has been especially designed to minimize on-state resistance, have a low gate charge with superior switching performance, and rugged avalanche characteristics. This Power MOSFET SFB95N03L is well suited for synchronous DC-DC Converters and Power Management in portable and battery operated products.




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