MFG:SemiWell Package Cooled:TO
MFG: SemiWell
Package Cooled: TO
Description: This Power MOSFET is produced using SemiWell's advanced planar stripe, DMOS technology. This latest te...
This Power MOSFET is produced using SemiWell's advanced planar stripe, DMOS technology. This latest technology has been especially designed to minimize on-state resistance, have a low gate charge with superior switching performance, and rugged avalanche characteristics. This Power MOSFET is well suited for synchronous DC-DC Converters and Power Management in portable and battery operated products.
|
Symbol |
Parameter |
Ratings |
Units |
|
VDSS |
Drain to Source Voltage |
30 |
V |
|
VGS |
Gate to Source Voltage |
±20 |
V |
|
ID |
Continuous Drain Current(@TC = 25°C) |
95 |
A |
| Continuous Drain Current(@TC = 100°C) |
67.3 | ||
|
IDM |
Drain Current Pulsed |
380 | |
|
EAS |
Single Pulse Avalanche Energy |
450 |
mJ |
|
dv/dt |
Peak Diode Recovery dv/dt |
7.0 |
V/ns |
|
PD |
Total Power Dissipation(@TA = 25 °C) |
3.75 |
W |
| Total Power Dissipation(@TC = 25 °C) Derating Factor above 25 °C |
150 |
W | |
|
1.0 |
W/°C | ||
|
TJ,TSTG |
Operating and Storage Temperature |
-55 to 175 |
°C |
|
TL |
Maximum Lead Temperature for soldering purpose, 1/8 from Case for 5 seconds. |
300 |
°C |
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