SFD3055, SFD3055L, SFD305L Selling Leads, Datasheet
MFG:SemiWell Package Cooled:TO D/C:07+
SFD3055, SFD3055L, SFD305L Datasheet download
Part Number: SFD3055
MFG: SemiWell
Package Cooled: TO
D/C: 07+
SFD3055, SFD3055L, SFD305L
- Table of contents:
Info of SFD3055
Info of SFD3055L
Info of SFD305L
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About SFD3055
PDF/DataSheet Download
Datasheet: SFD3055
File Size: 995250 KB
Manufacturer: ETC [ETC]
Download : Click here to Download
About SFD25
PDF/DataSheet Download
Datasheet: SFD25
File Size: 420139 KB
Manufacturer: Tyco Electronics
Download : Click here to Download
About SFD25
PDF/DataSheet Download
Datasheet: SFD25
File Size: 420139 KB
Manufacturer: Tyco Electronics
Download : Click here to Download
SFD3055L General Description
This Power MOSFET is produced using SemiWell's advanced planar stripe, DMOS technology. This latest technology has been especially designed to minimize on-state resistance, have a low gate charge with superior switching performance and rugged avalanche characteristics. This Power MOSFET is well suited for synchronous DC-DC Converters and Power Management in portable and battery operated products.
SFD3055L Maximum Ratings
|
Symbol |
Parameter |
Value |
Units |
| VDSS |
Drain to Source Voltage |
30 |
V |
| ID |
Continuous Drain Current(@TC = 25°C) |
12 |
A |
| Continuous Drain Current(@TC = 100°C) |
7.7 |
A | |
| IDM | Drain Current Pulsed (Note 1) |
30 |
A |
| VGS | Gate to Source Voltage |
±20 |
V |
| EAS | Single Pulsed Avalanche Energy (Note 2) |
30 |
mJ |
| dv/dt | Peak Diode Recovery dv/dt (Note 3) |
7.0 |
V/ns |
| PD | Total Power Dissipation(@TA = 25 °C) |
2.5 |
W |
| Total Power Dissipation(@TC = 25 °C) Derating Factor above 25 °C |
42 |
W | |
|
0.34 |
W/°C | ||
| TSTG,TJ | Operating Junction Temperature & Storage Temperature |
- 55 ~ 150 |
°C |
| TL | Maximum Lead Temperature for soldering purpose, 1/8 from Case for 5 seconds |
300 |
°C |
SFD3055L Features
` Low RDS(on) (0.15 )@VGS=10V
Low RDS(on) (0.30 )@VGS=4.5V
` Low Gate Charge (Typical 6.5nC)
` Improved dv/dt Capability
` 100% Avalanche Tested
` Maximum Junction Temperature Range (150°C)
Low RDS(on) (0.30 )@VGS=4.5V
` Low Gate Charge (Typical 6.5nC)
` Improved dv/dt Capability
` 100% Avalanche Tested
` Maximum Junction Temperature Range (150°C)
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