SFD30N06

Features:

` Low R<sub>DS</sub>(on) (0.04 )@V<sub>GS</sub>=10V
` Gate Charge (Typical 27nC)
` Improved dv/dt Capability
` 100% Avalanche Tested
` Maximum Junction Temperature Range (150°C)


Specifications

Symbol	Parameter	Value	Units
VDSS	Drain to Source Voltage	60	V
ID	Continuous Drain Current(@TC = 25°C)	23	A
	Continuous Drain Current(@TC = 100°C)	15	A
IDM	Drain Current Pulsed (Note 1)	92	A
VGS	Gate to Source Voltage	±20	V
EAS	Single Pulsed Avalanche Energy (Note 2)	430	mJ
dv/dt	Peak Diode Recovery dv/dt (Note 3)	7.0	V/ns
PD	Total Power Dissipation(@TA = 25 °C)	2.5	W
	Total Power Dissipation(@TC = 25 °C) Derating Factor above 25 °C	44	W
		0.35	W/°C
TSTG,TJ	Operating Junction Temperature & Storage Temperature	- 55 ~ 150	°C
TL	Maximum Lead Temperature for soldering purpose, 1/8 from Case for 5 seconds	300	°C

Description

This Power MOSFET SFD30N06 is produced using SemiWell's advanced planar stripe, DMOS technology. This latest technology has been especially designed to minimize on-state resistance, have a low gate charge with superior switching performance, and rugged avalanche characteristics. This Power MOSFET SFD30N06 is well suited for synchronous DC-DC Converters and Power Management in portable and battery operated products.