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SGH13N60UFD, SGH15N120RUF, SGH15N120RUFD

Table of contents:
Info of SGH13N60UFD
Info of SGH15N120RUF
Info of SGH15N120RUFD

SGH13N60UFD, SGH15N120RUF, SGH15N120RUFD Selling Leads, Datasheet

MFG:Fairchild Package Cooled:N/A D/C:TO

SGH13N60UFD, SGH15N120RUF, SGH15N120RUFD Picture

SGH13N60UFD, SGH15N120RUF, SGH15N120RUFD Datasheet download

Five Points

Part Number: SGH13N60UFD

MFG: Fairchild

Package Cooled: N/A

D/C: TO

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SGH13N60UFD Maximum Ratings

Symbol	Characteristics	Rating	Units
VCES	Collector-Emitter Voltage	600	V
VCES	Gate-Emitter Voltage	± 25	V
IC	Collector Current @ TC = 25°C	13	A
ICM (1)	Collector Current @ TC = 100°C	6.5	A
IF	Pulsed Collector Current	52	A
V_GS	Maximum Power Dissipation @ TC = 25°C	60	A
T_STG	Maximum Power Dissipation @ TC = 100°C	25	W
TJ	Operating Junction Temperature	-55 to +150	W
T_STG	Storage Temperature Range	-55 to +150	°C
T_L	Maximum Lead Temp. for soldering purposes,1/8" from case for 5 seconds	300	°C

SGH13N60UFD Features

* High Speed Switching
* Low Saturation Voltage: VCE(sat) = 1.95 V (@ Ic=6.5A)
* High Input Impedance
*CO-PAK, IGBT with FRD: Trr = 37nS (typ.)

SGH13N60UFD Typical Application

* AC & DC Motor controls
* General Purpose Inverters
* Robotics , Servo Controls
* Power Supply
* Lamp Ballast

SGH15N120RUF General Description

Fairchild's RUF series of Insulated Gate Bipolar Transistors (IGBTs) provide low conduction and switching losses as
well as short circuit ruggedness. The RUF series designed for applications such as motor control, uninterrupted power supplies (UPS) and general inverters where short circuit ruggedness is a required feature.

SGH15N120RUF Maximum Ratings

Symbol	Description	SGH10N120RUFD	Units
VCES	Collector-Emitter Voltage	1200	V
VCES	Gate-Emitter Voltage	± 25	V
IC	Collector Current @ TC = 25°C	24	A
ICM (1)	Collector Current @ TC = 100°C	15	A
IF	Pulsed Collector Current	45	A
V_GS	Maximum Power Dissipation @ TC = 25°C	180	A
T_STG	Maximum Power Dissipation @ TC = 100°C	72	W
TJ	Operating Junction Temperature	-55 to +150	W
T_STG	Storage Temperature Range	-55 to +150	°C
T_L	Maximum Lead Temp. for soldering purposes,1/8" from case for 5 seconds	300	°C

SGH15N120RUF Features

• Short circuit rated 10µs @ TC = 100°C, VGE = 15V
• High speed switching
• Low saturation voltage : VCE(sat) = 2.3 V @ IC = 15A
• High input impedance

SGH15N120RUF Typical Application

AC & DC motor controls, general purpose inverters, robotics, and servo controls.

SGH15N120RUFD General Description

Fairchild's RUFD series of Insulated Gate Bipolar Transistors (IGBTs) provides low conduction and switching
losses as well as short circuit ruggedness. The RUFD series is designed for applications such as motor control, uninterrupted power supplies (UPS) and general inverters where short circuit ruggedness is a required feature.

SGH15N120RUFD Maximum Ratings

Symbol	Description	SGH10N120RUFD	Units
VCES	Collector-Emitter Voltage	1200	V
VCES	Gate-Emitter Voltage	± 25	V
IC	Collector Current @ TC = 25°C	24	A
ICM (1)	Collector Current @ TC = 100°C	15	A
IF	Pulsed Collector Current	45	A
V_GS	Maximum Power Dissipation @ TC = 25°C	180	A
T_STG	Maximum Power Dissipation @ TC = 100°C	72	W
TJ	Operating Junction Temperature	-55 to +150	W
T_STG	Storage Temperature Range	-55 to +150	°C
T_L	Maximum Lead Temp. for soldering purposes,1/8" from case for 5 seconds	300	°C

SGH15N120RUFD Features

• Short circuit rated 10µs @ TC = 100°C, VGE = 15V
• High speed switching
• Low saturation voltage : VCE(sat) = 2.3 V @ IC = 15A
• High input impedance
• CO-PAK, IGBT with FRD : trr = 70ns (typ.)

SGH15N120RUFD Typical Application

AC & DC motor controls, general purpose inverters, robotics, and servo controls.

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