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MFG:TO-3P  Package Cooled:7850  D/C:FAIRCHIL  

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Part Number: SGH10N120RUFD

 

MFG: TO-3P

Package Cooled: 7850

D/C: FAIRCHIL

Description: Fairchild's RUFD series of Insulated Gate Bipolar Transistors (IGBTs) provides low conduction and swit...


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SGH10N120RUFD General Description


Fairchild's RUFD series of Insulated Gate Bipolar Transistors (IGBTs) provides low conduction and switching
losses as well as short circuit ruggedness. The RUFD series is designed for applications such as motor control, uninterrupted power supplies (UPS) and general inverters where short circuit ruggedness is a required feature.

SGH10N120RUFD Maximum Ratings

Symbol
Description
SGH10N120RUFD
Units
VCES
Collector-Emitter Voltage
1200
V
VCES
Gate-Emitter Voltage
± 25
V
IC
Collector Current @ TC = 25°C
16
A
ICM (1)
Collector Current @ TC = 100°C
10
A
IF
Pulsed Collector Current
30
VGS
Maximum Power Dissipation @ TC = 25°C
125
A
TSTG
Maximum Power Dissipation @ TC = 100°C
50
W
TJ
Operating Junction Temperature
-55 to +150
W

TSTG
 Storage Temperature Range
-55 to +150
°C
TL
Maximum Lead Temp. for soldering
purposes,1/8" from case for 5 seconds
300
°C

SGH10N120RUFD Features

• Short circuit rated 10µs @ TC = 100°C, VGE = 15V
• High speed switching
• Low saturation voltage : VCE(sat) = 2.3 V @ IC = 10A
• High input impedance
• CO-PAK, IGBT with FRD : trr = 65ns (typ.)

SGH10N120RUFD Typical Application

AC & DC motor controls, general purpose inverters, robotics, and servo controls.

SGH10N120RUFD datasheet

SGH10N120RUFD
PDF/DataSheet Download

  • Datasheet: SGH10N120RUFD
  • File Size: 523514 KB
  • Manufacturer: FAIRCHILD [Fairchild Semiconductor]
  • Click here to Download

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