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SGH40N60UFTU, SGH5N120RUF, SGH5N120RUFD

Table of contents:
Info of SGH40N60UFTU
Info of SGH5N120RUF
Info of SGH5N120RUFD

SGH40N60UFTU, SGH5N120RUF, SGH5N120RUFD Selling Leads, Datasheet

MFG:Fairchild Semiconductor Category:Discrete Semiconductor Products Package Cooled:FSC D/C:06+

SGH40N60UFTU, SGH5N120RUF, SGH5N120RUFD Picture

SGH40N60UFTU, SGH5N120RUF, SGH5N120RUFD Datasheet download

Five Points

Part Number: SGH40N60UFTU

Category: Discrete Semiconductor Products

MFG: Fairchild Semiconductor

Package Cooled: FSC

D/C: 06+

Description: IGBT HI PERFORM 600V 20A TO-3P

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SGH40N60UFTU Parameters

Technical/Catalog Information	SGH40N60UFTU
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Input Type	Standard
Voltage - Collector Emitter Breakdown (Max)	600V
Current - Collector (Ic) (Max)	40A
Vce(on) (Max) @ Vge, Ic	2.6V @ 15V, 20A
Power - Max	160W
Mounting Type	Through Hole
Package / Case	TO-3P
Packaging	Tube
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	SGH40N60UFTU SGH40N60UFTU

SGH5N120RUF General Description

Fairchild's RUF series of Insulated Gate Bipolar Transistors (IGBTs) provides low conduction and switching losses as
well as short circuit ruggedness.

The RUF series is designed for applications such as motor control, uninterrupted power supplies (UPS) and general inverters where short circuit ruggedness is a required feature.

SGH5N120RUF Maximum Ratings

Symbol	Description	SGH20N120RUFD	Units
V_CES	Collector-Emitter Voltage	1200	V
V_CES	Gate-Emitter Voltage	± 25	V
I_C	Collector Current @ TC = 25	8	A
I_C	Collector Current @ TC = 100	5	A
I _CM(1)	Pulsed Collector Current	15	A
T_SC	Short Circuit Withstand Time @ T_C= 100	10	s
P_D	Maximum Power Dissipation @ T_C= 25	74	W
P_D	Maximum Power Dissipation @ T_C= 100	30	W
T_J	Operating Junction Temperature	-55 to +150
T_stg	Storage Temperature Range	-55 to +150
T_L	Maximum Lead Temp. for soldering Purposes, 1/8" from case for 5 seconds	300

SGH5N120RUF Features

• Short circuit rated 10s @ T_C = 100°C, V_GE= 15V
• High speed switching
• Low saturation voltage : V_CE(sat) = 2.3 V @ I_C= 5A
• High input impedance

SGH5N120RUF Typical Application

AC & DC motor controls, general purpose inverters, robotics, and servo controls.

SGH5N120RUFD General Description

Fairchild's RUFD series of Insulated Gate Bipolar Transistors (IGBTs) provides low conduction and switchinglosses as well as short circuit ruggedness.

The RUFD series is designed for applications such as motor control, uninterrupted power supplies (UPS) and general inverters where short circuit ruggedness is a required feature.

SGH5N120RUFD Maximum Ratings

Symbol	Description	SGH20N120RUFD	Units
V_CES	Collector-Emitter Voltage	1200	V
V_CES	Gate-Emitter Voltage	± 25	V
I_C	Collector Current @ T_C = 25	8	A
I_C	Collector Current @ T_C = 100	5	A
I _CM(1)	Pulsed Collector Current	15	A
I_F	Diode Continuous Forward Current @ T_C= 100	5	A
I_FM	Diode Maximum Forward Current	30	A
T_SC	Short Circuit Withstand Time @ T_C= 100	10	s
P_D	Maximum Power Dissipation @ T_C = 25	74	W
P_D	Maximum Power Dissipation @ T_C= 100	30	W
T_J	Operating Junction Temperature	-55 to +150
T_stg	Storage Temperature Range	-55 to +150
T_L	Maximum Lead Temp. for soldering Purposes, 1/8" from case for 5 seconds	300

SGH5N120RUFD Features

• Short circuit rated 10s @ T_C= 100°C, V_GE = 15V
• High speed switching
• Low saturation voltage : V _CE(sat) = 2.3 V @ I_C= 5A
• High input impedance
• CO-PAK, IGBT with FRD : t_rr = 55ns (typ.)

SGH5N120RUFD Typical Application

AC & DC motor controls, general purpose inverters, robotics, and servo controls.

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