Position: Home > DataSheet > Index S > SGM Series > SGM2013-1.8/2.5/2.7/2.8/2.9/3.0/3.3, SGM2013-1.8XN3/TR, SGM2013N

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SGM2013-1.8/2.5/2.7/2.8/2.9/3.0/3.3, SGM2013-1.8XN3/TR, SGM2013N

Table of contents:
Info of SGM2013-1.8/2.5/2.7/2.8/2.9/3.0/3.3
Info of SGM2013-1.8XN3/TR
Info of SGM2013N

SGM2013-1.8/2.5/2.7/2.8/2.9/3.0/3.3, SGM2013-1.8XN3/TR, SGM2013N Selling Leads, Datasheet

MFG:7 Package Cooled:SGMC D/C:SOT23-3(3K?

SGM2013-1.8/2.5/2.7/2.8/2.9/3.0/3.3, SGM2013-1.8XN3/TR, SGM2013N Picture

SGM2013-1.8/2.5/2.7/2.8/2.9/3.0/3.3, SGM2013-1.8XN3/TR, SGM2013N Datasheet download

Five Points

Part Number: SGM2013-1.8/2.5/2.7/2.8/2.9/3.0/3.3

MFG: 7

Package Cooled: SGMC

D/C: SOT23-3(3K?

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SGM2013N General Description

The SGM2013N is an N-channel dual-gate GaAs MES FET for UHF-band low-noise amplification.

This FET is suitable for a wide range of applications including cellular/cordless phone.

SGM2013N Maximum Ratings

• Drain to source voltage                  VDSX                   6           V
• Gate 1 to source voltage                VG1S                4          V
• Gate 2 to source voltage                VG2S                4          V
• Drain current                                  ID                       18        mA
• Allowable power dissipation           PD                    100       mW
• Channel temperature                     Tch                   125
• Storage temperature                     Tstg    55 to +150

SGM2013N Features

• Ultra-small package
• Low voltage operation
• Low noise NF = 1.4dB (Typ) at 900MHz, NF = 1.7dB (Typ) at 1.5GHz
• High gain Ga = 18dB (Typ) at 900MHz, Ga = 16dB (Typ) at 1.5GHz
• High stability
• Built-in gate protection diode

SGM2013N Typical Application

UHF-band high-frequency amplifier and mixer

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