Position: Home > DataSheet > Index S > SHF Series > SHF-0186K, SHF-0189, SHF0289

Low Cost Custom Prototype PCB Manufacturer

SHF-0186K, SHF-0189, SHF0289

Table of contents:
Info of SHF-0186K
Info of SHF-0189
Info of SHF0289

SHF-0186K, SHF-0189, SHF0289 Selling Leads, Datasheet

MFG:Sirenza D/C:N/A

SHF-0186K, SHF-0189, SHF0289 Datasheet download

Five Points

Part Number: SHF-0186K

MFG: Sirenza

Package Cooled:

D/C: N/A

Attentive hint

Want to post a buying lead? If you are not a member yet, please select the specific/related part number first and then fill the quantity and your contact details in the "Request for Quotation Form" on the left, and then click "Send RFQ".Your buying lead can then be posted, and the reliable suppliers will quote via our online message system or other channels soon.

How to buy ?

How long will receive a response.

Top Sellers:

TOP

SHF-0186K General Description

Stanford Microdevices' SHF-0186K is a high performance GaAs Heterostructure FET housed in a low-cost surface-mount plastic package. HFET technology improves breakdown voltage while minimizing Schottky leakage current for higher power added efficiency and improved linearity.

Output power at 1dB compression for the SHF-0186K is +28 dBm when biased for Class AB operation at 8V and 100mA. The +40 dBm third order intercept makes it ideal for high dynamic range, high intercept point requirements. It is well suited for use in both analog and digital wireless communication infrastructure and subscriber equipment including cellular PCS, CDPD, wireless data, and pagers.

SHF-0186K Maximum Ratings

Parameter	Symbol	Value	Unit
Drain to Source Voltage	V_DS	+12	V
Gate to Source Voltage	V_GS	-5 to 0	V
RF Input Power	P_IN	200	mW
Operating Temperature	T_OP	-45 to +85
Storage Temperature	T_stg	-65 to +175
Operating Junction Temperature	T_J	+175

Operation of this device above any one of these parameters may cause permanent damage.
Bias Conditions should also satisfy the following expression: I_DSV_DS (max) < (T_J - T_L)/R_TH

SHF-0186K Features

• Patented AlGaAs/GaAs Heterostructure FET Technology
• +28 dBm P1dB Typical
• +40 dBm Output IP3 Typical
• High Drain Efficiency: Up to 46% at Class AB
• 17 dB Gain at 900 MHz (Application circuit)
• 15 dB Gain at 1900 MHz (Application circuit)

SHF-0186K Typical Application

• Analog and Digital Wireless System
• Cellular PCS, CDPD, Wireless Data, Pagers
• AN-020 Contains detailed application circuits

SHF-0189 General Description

Sirenza Microdevices' SHF-0189 is a high performance AlGaAs/GaAs Heterostructure FET (HFET) housed in a low-cost surface-mount plastic package. The HFET technology improves breakdown voltage while minimizing Schottky leakage current resulting in higher PAE and improved linearity.

Output power at 1dB compression for the SHF-0189 is +27 dBm when biased for Class AB operation at 8V,100mA. The +40 dBm third order intercept makes it ideal for high dynamic range, high intercept point requirements. It is well suited for use in both analog and digital wireless communication infrastructure and subscriber equipment including 3G, cellular, PCS, fixed wireless, and pager systems.

The matte tin finish on Sirenza's lead-free package utilizes a post annealing process to mitigate tin whisker formation and is RoHS compliant per EU Directive 2002/95. This package is also manufactured with green molding compounds that contain no antimony trioxide nor halogenated fire retardants.

SHF-0189 Maximum Ratings

Parameter	Symbol	Value	Unit
Drain Current	I_DS	200	mA
Forward Gate Current	I_GSF	1.2	mA
Reverse Gate Current	I_GSR	1.2	mA
Drain-to-Source Voltage	V_DS	+9.0	V
Gate-to-Source Voltage	V_GS	<-5 or >0	V
RF Input Power	P_IN	200	mW
Operating Lead Temperature	T_L	See Graph	°C
Storage Temperature Range	T_stor	-40 to +150	°C
Power Dissipation	P_DISS	See Graph	W
Channel Temperature	T_J	+165	°C
Operation of this device beyond any one of these limits may cause permanent damage. For reliable continuous operation, the device voltage and current must not exceed the maximum operating values specified in the table on page 1.

SHF-0189 Features

• Now available in Lead Free, RoHS Compliant, & Green Packaging
• High Linearity Performance at 1.96 GHz
+27 dBm P1dB
+40 dBm Output IP3
+16.5 dB Gain
• High Drain Efficiency
• See App Note AN-031 for circuit details

SHF-0189 Typical Application

• Analog and Digital Wireless Systems
• 3G, Cellular, PCS
• Fixed Wireless, Pager Systems

Hotspot Suppliers Product

Product List A B C D E F G H I J K L M N O P Q R S T U V W X Y Z 0 1 2 3 4 5 6 7 8 9

MT58L64L18CT-10

Price: 4-6 USD

MT58L64L18CT-10 TQFP100
DL-7140-211M

Price: 5-6.5 USD

DL-7140-211M laser tube
74LVC74APG

Price: 4-5 USD

74LVC74APG - IC FLIP FLOP D-Type POS-EDG DUAL 14TSSOP
CY28346ZI-2

Price: 6.5-8 USD

CYPRESS - Clock Synthesizer with Differential CPU Outputs
PI5V330QEX

Price: 0.284-0.286 USD

PI5V330QEX Pericom Multiplexer Switch ICs
BSM300GA120DN2

Price: 1-2 USD

IGBT power module, Single switch, 1200 V, Collector-emitter voltage, 430A
SVA150XG04TB

Price: 1-2 USD

a-Si TFT-LCD, NEC, 228.096Hmm, 560V
PC354N1

Price: 0.124-0.2 USD

PC354N1T - Mini-flat Package, AC Input Type Photocoupler - Sharp Electrionic Components
RL1210JR-070R22L

Price: 0.177-0.178 USD

RL1210JR51-XX-BL - Thick Film Chip Resistor Low Ohmic - TAITRON Components Incorporated
STPS140A

Price: 0.053-0.055 USD

STPS140A - POWER SCHOTTKY RECTIFIER - STMicroelectronics
STA013

Price: 1.45-1.5 USD

STA013 - MPEG 2.5 LAYER III AUDIO DECODER - STMicroelectronics
SMBJ5347B

Price: 0.073-0.075 USD

SMBJ5347B - 5 Watt Surface Mount Silicon Zener Diodes - Micro Commercial Components