Position: Home  > All Categories> Integrated Circuits (ICs) > SHF-0186

SHF-0186

Features: • Patented AlGaAs/GaAs Heterostructure FET Technology• +28 dBm P1dB Typical• +40 dBm Output IP3 Typical• High Drain Efficiency: Up to 46% at Class AB• 17 dB Gain at 900 MHz (Application circuit)• 15 dB Gain at 1900 MHz (Application circuit)• Gmax...

product image

SHF-0186 Picture
See larger image
SeekIC No. : 004489758 Detail

SHF-0186: Features: • Patented AlGaAs/GaAs Heterostructure FET Technology• +28 dBm P1dB Typical• +40 dBm Output IP3 Typical• High Drain Efficiency: Up to 46% at Class AB• 17 dB G...

SHF-0186 Data Sheet

floor Price/Ceiling Price

Get Latest Price
Part Number:
SHF-0186
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2024/4/26

add to my favourite

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Description



Features:

• Patented AlGaAs/GaAs Heterostructure FET Technology
• +28 dBm P1dB Typical
• +40 dBm Output IP3 Typical
• High Drain Efficiency: Up to 46% at Class AB
• 17 dB Gain at 900 MHz (Application circuit)
• 15 dB Gain at 1900 MHz (Application circuit)
• Gmax Guaranteed at 12 GHz


Application

• Analog and Digital Wireless System
• Cellular PCS, CDPD, Wireless Data, Pagers
• AN-020 Contains detailed application circuits


Specifications

Parameter
Symbol
Value
Unit
Drain to Source Voltage
VDS
+12
V
Gate to Source Voltage
VGS
-5 to 0
V
RF Input Power
PIN
200
mW
Operating Temperature
TOP
-45 to +85
Storage Temperature
Tstg
-65 to +175
Operating Junction Temperature
TJ
+175
Operation of this device above any one of these parameters may cause permanent damage.
Bias Conditions should also satisfy the following expression: IDSVDS (max) < (TJ - TL)/RTH


Description

Stanford Microdevices' SHF-0186 is a high performance GaAs Heterostructure FET housed in a low-cost surface-mount plastic package. HFET technology improves breakdown voltage while minimizing Schottky leakage current for higher power added efficiency and improved linearity.

Output power at 1dB compression for the SHF-0186 is +28 dBm when biased for Class AB operation at 8V and 100mA.
The +40 dBm third order intercept makes SHF-0186 ideal for high dynamic range, high intercept point requirements. It is well suited for use in both analog and digital wireless communication infrastructure and subscriber equipment including cellular PCS, CDPD, wireless data, and pagers.




Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
You may also be interested in :
Potentiometers, Variable Resistors
RV24YN
WXD4-23-3W
Memory Cards, Modules
WT32
VTL5C7
Computers, Office - Components, Accessories
DS-4008HCI
LB104V03(A1)
Static Control, ESD, Clean Room Products
DPA5
PA800-A41
Connectors, Interconnects
ASP-134488-01
WM4078-ND
Tools
TCP202
G084SN05 V.3
View more