SPB-3018, SPB30N03, SPB30N03-E3045 Selling Leads, Datasheet
MFG:SIRENZA Package Cooled:SOP8 D/C:03+
SPB-3018, SPB30N03, SPB30N03-E3045 Datasheet download
Part Number: SPB-3018
MFG: SIRENZA
Package Cooled: SOP8
D/C: 03+
MFG:SIRENZA Package Cooled:SOP8 D/C:03+
SPB-3018, SPB30N03, SPB30N03-E3045 Datasheet download
MFG: SIRENZA
Package Cooled: SOP8
D/C: 03+
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PDF/DataSheet Download
Datasheet: SPB-3018
File Size: 212900 KB
Manufacturer: ETC [ETC]
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PDF/DataSheet Download
Datasheet: SPB30N03
File Size: 574016 KB
Manufacturer: INFINEON [Infineon Technologies AG]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: SPB02N60
File Size: 121401 KB
Manufacturer: Siemens Semiconductor Group
Download : Click here to Download
The SPB-3018 is high-efficiency InGaP/GaAs Heterojuction Bipolar Transistor (HBT) amplifier RFIC. This amplifier incorporates an on-chip Class AB bias circuit which provides excellent efficiency while maintaining good linearity. The on-chip bias also allows the device output power (and current) to drive up towards saturation as the input power increases. The SPB-3018 is an ideal choice for multi-carrier as well as digital wireless telecom or general wireless applications in the 400-2500 MHz range.
Parameter | Absolute Limit |
Max Device Current (IDQ) | 400 mA |
Max Device Voltage (VD) | 6 V |
Max. RF Input Power | +26 dBm |
Max. Operating Dissipated Power (quiescent) |
2.0 W |
Max. Junction Temp. (TJ) | +150°C |
Operating Temp. Range (TL) | -40°C to +85°C |
Max. Storage Temp. | +150°C |
Operation of this device beyond any one of these limits may cause permanent damage. For reliable continuous operation, the device voltage and current must not exceed the maximum operating values specified in the table on page one. Bias Conditions should also satisfy the following expression: IDVD < (TJ - TL) / RTH, j-l TL=TLEAD |