SPB02N60C3

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Mounting Style : SMD/SMT
Packaging : Reel
Maximum Operating Temperature : + 150 C
Drain-Source Breakdown Voltage : 600 V
Package / Case : TO-263
Continuous Drain Current : 1.8 A
Resistance Drain-Source RDS (on) : 3 Ohms


Features:

• New revolutionary high voltage technology
• Ultra low gate charge
• Periodic avalanche rated
• Extreme dv/dt rated
• Ultra low effective capacitances




Specifications

Parameter	Symbol	Value	Unit
Continuous drain current TC = 25 °C TC = 100 °C	ID	1.8 1.1	A
Pulsed drain current, tp limited by Tjmax	ID puls	3.2
Avalanche energy, single pulse ID=1.35A, VDD=50V	EAS	50	mJ
Avalanche energy, repetitive tAR limited by Tjmax2) ID=1.8A, VDD=50V	EAR	0.07
Avalanche current, repetitive tAR limited by Tjmax	IAR	1.8	A
Gate source voltage	VGS	±20	V
Gate source voltage AC (f >1Hz)	VGS	±30
Power dissipation, TC = 25°C	Ptot	25	W
Operating and storage temperature	Tj , Tstg	-55...+150	°C
Drain Source voltage slope VDS = 480 V, ID = 1.8 A, Tj = 125 °C	dv/dt	20	V/ns

Description

The SPB02N60C3 is designed as one kind of cool MOS power transistors.

SPB02N60C3  has five features. (1)New revolutionary high voltage technology. (2)Ultra low gate charge. (3)Periodic avalanche rated. (4)Extreme dv/dt rated. (5)Ultra low effective capacitances. Those are all the main features.

Some absolute maximum ratings of SPB02N60C3  have been concluded into several points as follow. (1)Its continuous drain current would be 1.8A at Tc=25°C and would be 1.1A at Tc=100°C. (2)Its pulsed drain current, tp limited by Tjmax would be 5.4A. (3)Its avalanche energy single pulse Id=1.35A and Vdd=50V would be 50mJ. (4)Its avalanche energy repetitive tAR limited by Tjmax would be 0.07mJ at Id=1.8A and Vdd=50V. (5)Its avalanche current repetitive tAR limited by Tjmax would be 1.8A. (6)Its gate source voltage static would be +/-20V. (7)Gate source voltage AC (f>1Hz) would be +/-30V. (8)Its power dissipation would be 25W. (9)Its operating temperature range would be from -55°C to 150°C. (10)Its storage temperature range would be from -55°C to 150°C. (11)Its drain source voltage slope would be 50V/ns. It should be noted that stresses above those listed in absolute maximum ratings may cause permanent damage to device.

Also some electrical characteristics of SPB02N60C3 are concluded as follow. (1)Its drain source breakdown voltage would be min 600V. (2)Its drain to source avalanche breakdown voltage would be typ 700V. (3)Its gate threshold voltage would be min 2.1V and typ 3V and max 3.9V. (4)ts zero gate voltage drain current would be typ 0.5uA and max 1uA at Tj=25°C and would be max 50uA at Tj=150°C. (5)Its gate to source leakage current would be max 100nA. (6)Its drain to source on-state resistance would be typ 2.7ohms and max 3ohms at Tj=25°C and would be typ 7.3ohms at Tj=150°C. And so on. If you have any question or suggestion or want to know more information please contact us for details. Thank you!

Parameters:

Technical/Catalog Information	SPB02N60C3
Vendor	Infineon Technologies (VA)
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	650V
Current - Continuous Drain (Id) @ 25° C	1.8A
Rds On (Max) @ Id, Vgs	3 Ohm @ 1.1A, 10V
Input Capacitance (Ciss) @ Vds	200pF @ 25V
Power - Max	25W
Packaging	Cut Tape (CT)
Gate Charge (Qg) @ Vgs	12.5nC @ 10V
Package / Case	D²Pak, SMD-220, TO-263 (2 leads + tab)
FET Feature	Standard
Lead Free Status	Contains Lead
RoHS Status	RoHS Non-Compliant
Other Names	SPB02N60C3 SPB02N60C3 SPB02N60C3INCT ND SPB02N60C3INCTND SPB02N60C3INCT