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SPB03N60S5

MOSFET COOL MOS N-CH 600V 3.2A

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SeekIC No. : 00160926 Detail

SPB03N60S5: MOSFET COOL MOS N-CH 600V 3.2A

SPB03N60S5 Data Sheet

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Part Number:
SPB03N60S5
Mfg:
Infineon Technologies
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 600 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 3.2 A
Resistance Drain-Source RDS (on) : 1.4 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : TO-263 Packaging : Reel    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Mounting Style : SMD/SMT
Packaging : Reel
Maximum Operating Temperature : + 150 C
Drain-Source Breakdown Voltage : 600 V
Package / Case : TO-263
Resistance Drain-Source RDS (on) : 1.4 Ohms
Continuous Drain Current : 3.2 A


Features:

• New revolutionary high voltage technology
• Ultra low gate charge
• Periodic avalanche rated
• Extreme dv/dt rated
• Ultra low effective capacitances
• Improved transconductance


Specifications

Parameter Symbol Value Unit
Continuous drain current
TC = 25 °C
TC = 100 °C		 ID 1.8
1.1		 A
Pulsed drain current, tp limited by Tjmax ID puls 3.2
Avalanche energy, single pulse
ID=1.35A, VDD=50V		 EAS 50 mJ
Avalanche energy, repetitive tAR limited by Tjmax2)
ID=1.8A, VDD=50V		 EAR 0.07
Avalanche current, repetitive tAR limited by Tjmax IAR 1.8 A
Gate source voltage VGS ±20 V
Gate source voltage AC (f >1Hz) VGS ±30
Power dissipation, TC = 25°C Ptot 25 W
Operating and storage temperature Tj , Tstg -55...+150 °C
Drain Source voltage slope
VDS = 480 V, ID = 1.8 A, Tj = 125 °C		 dv/dt 20 V/ns



Parameters:

Technical/Catalog InformationSPB03N60S5
VendorInfineon Technologies
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)600V
Current - Continuous Drain (Id) @ 25° C3.2A
Rds On (Max) @ Id, Vgs1.4 Ohm @ 2A, 10V
Input Capacitance (Ciss) @ Vds 420pF @ 25V
Power - Max38W
PackagingTape & Reel (TR)
Gate Charge (Qg) @ Vgs16nC @ 10V
Package / CaseD²Pak, SMD-220, TO-263 (2 leads + tab)
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names SPB03N60S5
SPB03N60S5
SPB03N60S5INTR ND
SPB03N60S5INTRND
SPB03N60S5INTR



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