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SPB101BG, SPB10N10LG, SPB11N60C3

Table of contents:
Info of SPB101BG
Info of SPB10N10LG
Info of SPB11N60C3

SPB101BG, SPB10N10LG, SPB11N60C3 Selling Leads, Datasheet

MFG:Infineon Technologies (VA) Category:Discrete Semiconductor Products Package Cooled:NEW AND ORIGINAL D/C:08+/09+

SPB101BG, SPB10N10LG, SPB11N60C3 Datasheet download

Five Points

Part Number: SPB11N60C3

Category: Discrete Semiconductor Products

MFG: Infineon Technologies (VA)

Package Cooled: NEW AND ORIGINAL

D/C: 08+/09+

Description: MOSFET N-CH 650V 11A D2PAK

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SPB11N60C3 Parameters

Technical/Catalog Information	SPB11N60C3
Vendor	Infineon Technologies (VA)
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	650V
Current - Continuous Drain (Id) @ 25° C	11A
Rds On (Max) @ Id, Vgs	380 mOhm @ 7A, 10V
Input Capacitance (Ciss) @ Vds	1200pF @ 25V
Power - Max	125W
Packaging	Digi-Reel?
Gate Charge (Qg) @ Vgs	60nC @ 10V
Package / Case	D²Pak, SMD-220, TO-263 (2 leads + tab)
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	SPB11N60C3 SPB11N60C3 SPB11N60C3INDKR ND SPB11N60C3INDKRND SPB11N60C3INDKR

SPB11N60C3 Maximum Ratings

Parameter	Symbol	Value		Unit
Parameter	Symbol	SPP_B	SPA	Unit
Continuous drain current T_C = 25 °C T_C= 100 °C	I_D	11 7	11¹) 7¹)	A
Pulsed drain current, t_plimited by T_jmax	I_{D puls}	33	33	A
Avalanche energy, single pulse I_D=5.5A, V_DD=50V	E_AS	340	340	mJ
Avalanche energy, repetitive t_AR limited by T_jmax2) I_D=11A, V_DD=50V	E_AR	0.6	0.6	mJ
Avalanche current, repetitive t_AR limited by T_jmax	I_AR	11	11	A
Gate source voltage static	V_GS	±20	±20	V
Gate source voltage AC (f >1Hz)	V_GS	±30	±30
Power dissipation, T_C = 25°C	P_tot	125	33	W
Operating and storage temperature	T_j, T_stg	-55...+150		°C
Drain Source voltage slope V_DS = 480 V, I_D = 11 A, T_j= 125 °C	dv/dt	50		V/ns

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SPB11N60C3 Features

• New revolutionary high voltage technology
• Ultra low gate charge
• Periodic avalanche rated
• Extreme dv/dt rated
• High peak current capability
• Improved transconductance
• P-TO-220-3-31: Fully isolated package (2500 VAC; 1 minute)

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