MFG:Infineon Technologies Category:Discrete Semiconductor Products Package Cooled:INF/SIE D/C:08+
SPB10N10, SPB10N10L, SPB11N60C2 Datasheet download
Category: Discrete Semiconductor Products
MFG: Infineon Technologies
Package Cooled: INF/SIE
D/C: 08+
Description: MOSFET N-CH 100V 10.3A D2PAK
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PDF/DataSheet Download
Datasheet: SPB10N10
File Size: 806265 KB
Manufacturer: INFINEON [Infineon Technologies AG]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: SPB02N60
File Size: 121401 KB
Manufacturer: Siemens Semiconductor Group
Download : Click here to Download
PDF/DataSheet Download
Datasheet: SPB11N60C2
File Size: 164019 KB
Manufacturer: INFINEON [Infineon Technologies AG]
Download : Click here to Download
| Technical/Catalog Information | SPB10N10 |
| Vendor | Infineon Technologies |
| Category | Discrete Semiconductor Products |
| Mounting Type | Surface Mount |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 100V |
| Current - Continuous Drain (Id) @ 25° C | 10.3A |
| Rds On (Max) @ Id, Vgs | 170 mOhm @ 7.8A, 10V |
| Input Capacitance (Ciss) @ Vds | 426pF @ 25V |
| Power - Max | 50W |
| Packaging | Tape & Reel (TR) |
| Gate Charge (Qg) @ Vgs | 19.4nC @ 10V |
| Package / Case | D²Pak, SMD-220, TO-263 (2 leads + tab) |
| FET Feature | Standard |
| Lead Free Status | Contains Lead |
| RoHS Status | RoHS Non-Compliant |
| Other Names | SPB10N10 SPB10N10 |
| Parameter | Symbol | Value | Unit |
| Continuous drain current TC = 25 °C TC = 100 °C |
ID | 10.3 7.8 |
A |
| Pulsed drain current TC = 25 °C |
ID puls | 41.2 | |
| Avalanche energy, single pulse ID =-8.8 A, VDD = 25 V, RGS = 25 |
EAS | 60 | mJ |
| Reverse diode dv/dt IS =10.3 A, VDS = 80 V, di/dt = 200 A/s, Tjmax = 175 °C |
dv/dt | 6 | kV/s |
| Gate source voltage | VGS | ±20 | V |
| Power dissipation TC = 25 °C |
Ptot | 50 | W |
| Operating and storage temperature | Tj , Tstg | -55... +175 | °C |
| IEC climatic category; DIN IEC 68-1 | 55/175/56 |
· N-Channel
· Enhancement mode
·175°C operating temperature
· Avalanche rated
· dv/dt rated
| Technical/Catalog Information | SPB10N10L |
| Vendor | Infineon Technologies |
| Category | Discrete Semiconductor Products |
| Mounting Type | Surface Mount |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 100V |
| Current - Continuous Drain (Id) @ 25° C | 10.3A |
| Rds On (Max) @ Id, Vgs | 154 mOhm @ 8.1A, 10V |
| Input Capacitance (Ciss) @ Vds | 444pF @ 25V |
| Power - Max | 50W |
| Packaging | Tape & Reel (TR) |
| Gate Charge (Qg) @ Vgs | 22nC @ 10V |
| Package / Case | D²Pak, SMD-220, TO-263 (2 leads + tab) |
| FET Feature | Logic Level Gate |
| Lead Free Status | Contains Lead |
| RoHS Status | RoHS Non-Compliant |
| Other Names | SPB10N10L SPB10N10L |
| Parameter | Symbol | Value | Unit | |
| SPP_B | SPA | |||
| Continuous drain current TC = 25 °C TC = 100 °C |
ID | 11 7 |
111) 71) |
A |
| Pulsed drain current, tp limited by Tjmax | ID puls | 22 | 22 | A |
| Avalanche energy, single pulse ID=5.5A, VDD=50V |
EAS | 340 | 340 | mJ |
| Avalanche energy, repetitive tAR limited by Tjmax2) ID=11A, VDD=50V |
EAR | 0.6 | 0.6 | |
| Avalanche current, repetitive tAR limited by Tjmax | IAR | 11 | 11 | A |
| Reverse diode dv/dt IS = 11 A, VDS < VDD, di/dt=100A/s, Tjmax=150°C |
dv/dt | 6 | 6 | V/ns |
| Gate source voltage | VGS | ±20 | ±20 | V |
| Gate source voltage AC (f >1Hz) | VGS | ±30 | ±30 | |
| Power dissipation, TC = 25°C | Ptot | 125 | 33 | W |
| Operating and storage temperature | Tj , Tstg | -55...+150 | °C | |
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