MFG:Infineon Technologies (VA) Category:Discrete Semiconductor Products Package Cooled:Original D/C:07+
SPB11N60S5E3045A, SPB12N50C3, SPB12-R80 Datasheet download
Category: Discrete Semiconductor Products
MFG: Infineon Technologies (VA)
Package Cooled: Original
D/C: 07+
Description: MOSFET N-CH 560V 11.6A TO-263
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PDF/DataSheet Download
Datasheet: SPB02N60
File Size: 121401 KB
Manufacturer: Siemens Semiconductor Group
Download : Click here to Download
PDF/DataSheet Download
Datasheet: SPB12N50C3
File Size: 374517 KB
Manufacturer: INFINEON [Infineon Technologies AG]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: SPB02N60
File Size: 121401 KB
Manufacturer: Siemens Semiconductor Group
Download : Click here to Download
| Technical/Catalog Information | SPB12N50C3 |
| Vendor | Infineon Technologies (VA) |
| Category | Discrete Semiconductor Products |
| Mounting Type | Surface Mount |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 560V |
| Current - Continuous Drain (Id) @ 25° C | 11.6A |
| Rds On (Max) @ Id, Vgs | 380 mOhm @ 7A, 10V |
| Input Capacitance (Ciss) @ Vds | 1200pF @ 25V |
| Power - Max | 125W |
| Packaging | Digi-Reel? |
| Gate Charge (Qg) @ Vgs | 49nC @ 10V |
| Package / Case | D²Pak, SMD-220, TO-263 (2 leads + tab) |
| FET Feature | Standard |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | SPB12N50C3 SPB12N50C3 SPB12N50C3INDKR ND SPB12N50C3INDKRND SPB12N50C3INDKR |
| Parameter | Symbol | Value | Unit | |
| SPP_B_I | SPA | |||
| Continuous drain current TC = 25 °C TC = 100 °C |
ID | 11.6 7 |
11.61) 71) |
A |
| Pulsed drain current, tp limited by Tjmax | ID puls | 34.8 | 34.8 | A |
| Avalanche energy, single pulse ID=2.5A, VDD=50V |
EAS | 340 | 340 | mJ |
| Avalanche energy, repetitive tAR limited by Tjmax2) ID=11.6A, VDD=50V |
EAR | 0.6 | 0.6 | |
| Avalanche current, repetitive tAR limited by Tjmax | IAR | 11.6 | 11.6 | A |
| Gate source voltage | VGS | ±20 | ±20 | V |
| Gate source voltage AC (f >1Hz) | VGS | ±30 | ±30 | |
| Power dissipation, TC = 25°C | Ptot | 125 | 33 | W |
| Operating and storage temperature | Tj , Tstg | -55...+150 | °C | |
| Drain Source voltage slope VDS = 400 V, ID = 11.6 A, Tj = 125 °C |
dv/dt | 50 | V/ns | |
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