MFG:Infineon Technologies Category:Discrete Semiconductor Products D/C:07+
SPB12-R40, SPB160N04S2-03, SPB160N04S2L-03 Datasheet download
Category: Discrete Semiconductor Products
MFG: Infineon Technologies
Package Cooled:
D/C: 07+
Description: MOSFET N-CH 40V 160A D2PAK-7
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PDF/DataSheet Download
Datasheet: SPB02N60
File Size: 121401 KB
Manufacturer: Siemens Semiconductor Group
Download : Click here to Download
PDF/DataSheet Download
Datasheet: SPB160N04S2-03
File Size: 305463 KB
Manufacturer: INFINEON [Infineon Technologies AG]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: SPB160N04S2L-03
File Size: 304346 KB
Manufacturer: INFINEON [Infineon Technologies AG]
Download : Click here to Download
| Technical/Catalog Information | SPB160N04S2-03 |
| Vendor | Infineon Technologies |
| Category | Discrete Semiconductor Products |
| Mounting Type | Surface Mount |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 40V |
| Current - Continuous Drain (Id) @ 25° C | 160A |
| Rds On (Max) @ Id, Vgs | 2.9 mOhm @ 80A, 10V |
| Input Capacitance (Ciss) @ Vds | 7320pF @ 25V |
| Power - Max | 300W |
| Packaging | Tape & Reel (TR) |
| Gate Charge (Qg) @ Vgs | 170nC @ 10V |
| Package / Case | D²Pak, TO-263 (7 leads + tab) |
| FET Feature | Standard |
| Lead Free Status | Contains Lead |
| RoHS Status | RoHS Non-Compliant |
| Other Names | SPB160N04S2 03 SPB160N04S203 |
| Parameter | Symbol | Value | Unit |
| Continuous drain current1) TC = 25 °C |
ID | 160 160 |
A |
| Pulsed drain current TC = 25 °C |
ID puls | 640 | |
| Avalanche energy, single pulse ID =80A, VDD = 25 V, RGS = 25 |
EAS | 810 | mJ |
| Repetitive avalanche energy, limited by Tjmax 2) | EAR | 30 | |
| Reverse diode dv/dt IS =160 A, VDS =44, di/dt = 200 A/s, Tjmax = 175 °C |
dv/dt | 6 | kV/s |
| Gate source voltage | VGS | ±20 | V |
| Power dissipation TC = 25 °C |
Ptot | 300 | W |
| Operating and storage temperature | Tj , Tstg | -55... +175 | °C |
| IEC climatic category; DIN IEC 68-1 | 55/175/56 |
1 Current limited by bondwire ; with an RthJC = 0.5K/W the chip is able to carry ID= 235A at 25°C, for detailed information see app.-note ANPS071E available at www.infineon.com/optimos
2 Defined by design. Not subject to production test
| Technical/Catalog Information | SPB160N04S2L-03 |
| Vendor | Infineon Technologies |
| Category | Discrete Semiconductor Products |
| Mounting Type | Surface Mount |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 40V |
| Current - Continuous Drain (Id) @ 25° C | 160A |
| Rds On (Max) @ Id, Vgs | 2.7 mOhm @ 80A, 10V |
| Input Capacitance (Ciss) @ Vds | 8000pF @ 25V |
| Power - Max | 300W |
| Packaging | Tape & Reel (TR) |
| Gate Charge (Qg) @ Vgs | 230nC @ 10V |
| Package / Case | D²Pak, TO-263 (7 leads + tab) |
| FET Feature | Standard |
| Lead Free Status | Contains Lead |
| RoHS Status | RoHS Non-Compliant |
| Other Names | SPB160N04S2L 03 SPB160N04S2L03 |
| Parameter | Symbol | Value | Unit |
| Continuous drain current1) TC = 25 °C |
ID | 160 160 |
A |
| Pulsed drain current TC = 25 °C |
ID puls | 640 | |
| Avalanche energy, single pulse ID =80A, VDD = 25 V, RGS = 25 |
EAS | 810 | mJ |
| Repetitive avalanche energy, limited by Tjmax 2) | EAR | 30 | |
| Reverse diode dv/dt IS =160 A, VDS =32, di/dt = 200 A/s, Tjmax = 175 °C |
dv/dt | 6 | kV/s |
| Gate source voltage | VGS | ±20 | V |
| Power dissipation TC = 25 °C |
Ptot | 300 | W |
| Operating and storage temperature | Tj , Tstg | -55... +175 | °C |
| IEC climatic category; DIN IEC 68-1 | 55/175/56 |
1 Current limited by bondwire ; with an RthJC = 0.5K/W the chip is able to carry ID= 243A at 25°C, for detailed information see app.-note ANPS071E available at www.infineon.com/optimos
2 Defined by design. Not subject to production test
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