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ID=42 A, VDS=24 V, di /dt =200 A/s, T j,max=175 °C
6
kV/s
Gate source voltage
VGS
±20
V
Power dissipation
Ptot
TC=25 °C
83
W
Operating and storage temperature
Tj , Tstg
-55 ... 175
°C
IEC climatic category; DIN IEC 68-1
55/175/56
1) Current is limited by bondwire; with an RthJC=1.8 K/W the chip is able to carry 64 A at 25°C, for detailed information see app.-note ANPS071E at www.infineon.com/optimos 2) Defined by design. Not subject to production test
SPB42N03S2L-13 Features
• N-channel • Enhancement mode • Logic level • Excellent gate charge x RDS(on) product (FOM) • Superior thermal resistance • 175 °C operating temperature • Avalanche rated • dv /dt rated