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SPB32N03L E3045A, SPB35N10, SPB42N03S2L-13

SPB32N03L E3045A, SPB35N10, SPB42N03S2L-13 Selling Leads, Datasheet

MFG:Infineon Technologies (VA)  Category:Discrete Semiconductor Products  Package Cooled:07+  D/C:TO263-3

SPB35N10 Picture

SPB32N03L E3045A, SPB35N10, SPB42N03S2L-13 Datasheet download

Five Points

Part Number: SPB35N10

Category: Discrete Semiconductor Products

MFG: Infineon Technologies (VA)

Package Cooled: 07+

D/C: TO263-3

Description: MOSFET N-CH 30V 42A D2PAK

 

 
 
 
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About SPB02N60

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Datasheet: SPB02N60

File Size: 121401 KB

Manufacturer: Siemens Semiconductor Group

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About SPB35N10

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Datasheet: SPB35N10

File Size: 492246 KB

Manufacturer: INFINEON [Infineon Technologies AG]

Download : Click here to Download

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SPB42N03S2L-13 Suppliers

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  • Beijing huadong shiji teconolgy Co.,Lt   China
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    Tel: 86-010-62575888 805
    Fax: 86-010-62575899
    (5)
  • SPB02N60C3

  • Vendor: Infineon Pack: TO D/C: 09+& Qty: 19890  Adddate: 2024-04-30
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  • EK   China
    Contact: Mr.kevin  
    Tel: +86-755-111111111
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    (1)
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  • Vendor: Infineon Pack: TO D/C: 09+& Qty: 1015  Adddate: 2024-04-30
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  • Beijing huadong shiji teconolgy Co.,Lt   China
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    Tel: 86-010-62575888 805
    Fax: 86-010-62575899
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    Fax: 86-010-62575899
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About SPB42N03S2L-13

PDF/DataSheet Download

Datasheet: SPB42N03S2L-13

File Size: 554412 KB

Manufacturer: INFINEON [Infineon Technologies AG]

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SPB35N10 Parameters

Technical/Catalog InformationSPB35N10
VendorInfineon Technologies
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25° C35A
Rds On (Max) @ Id, Vgs44 mOhm @ 26.4A, 10V
Input Capacitance (Ciss) @ Vds 1570pF @ 25V
Power - Max150W
PackagingTape & Reel (TR)
Gate Charge (Qg) @ Vgs65nC @ 10V
Package / CaseD²Pak, SMD-220, TO-263 (2 leads + tab)
FET FeatureStandard
Lead Free StatusContains Lead
RoHS StatusRoHS Non-Compliant
Other Names SPB35N10
SPB35N10
SPB35N10INTR ND
SPB35N10INTRND
SPB35N10INTR

SPB35N10 Maximum Ratings

Parameter Symbol Value Unit
Continuous drain current
TC = 25 °C
TC = 100 °C
ID 35
26.4
A
Pulsed drain current
TC = 25 °C
ID puls 140
Avalanche energy, single pulse
ID =35 A, VDD = 25 V, RGS = 25
EAS 245 mJ
Reverse diode dv/dt
IS =35 A, VDS = 80 V, di/dt = 200 A/s,
Tjmax = 175 °C
dv/dt 6 kV/s
Gate source voltage VGS ±20 V
Power dissipation
TC = 25 °C
Ptot 150 W
Operating and storage temperature Tj , Tstg -55... +175 °C
IEC climatic category; DIN IEC 68-1 55/175/56

SPB35N10 Features

· N-Channel
· Enhancement mode
·175°C operating temperature
· Avalanche rated
· dv/dt rated

SPB42N03S2L-13 Parameters

Technical/Catalog InformationSPB42N03S2L-13
VendorInfineon Technologies (VA)
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25° C42A
Rds On (Max) @ Id, Vgs12.6 mOhm @ 21A, 10V
Input Capacitance (Ciss) @ Vds 1130pF @ 25V
Power - Max83W
PackagingCut Tape (CT)
Gate Charge (Qg) @ Vgs30.5nC @ 10V
Package / CaseD²Pak, SMD-220, TO-263 (2 leads + tab)
FET FeatureLogic Level Gate
Lead Free StatusContains Lead
RoHS StatusRoHS Non-Compliant
Other Names SPB42N03S2L 13
SPB42N03S2L13
SPB42N03S2L13INCT ND
SPB42N03S2L13INCTND
SPB42N03S2L13INCT

SPB42N03S2L-13 Maximum Ratings

Parameter Symbol Conditions Value Unit
Continuous drain current1)

ID TC=25 °C 42 A
TC=100 °C 42
Pulsed drain current
ID puls TC=25 °C 248
Avalanche energy, single pulse
EAS ID=42 A, RGS=25 110 mJ
Repetitive avalanche energy EAR limited by T jmax2)
8 mJ
Reverse diode dv/dt

dv/dt ID=42 A, VDS=24 V,
di /dt =200 A/s,
T j,max=175 °C
6 kV/s
Gate source voltage VGS   ±20 V
Power dissipation
Ptot TC=25 °C 83 W
Operating and storage temperature Tj , Tstg   -55 ... 175 °C
IEC climatic category; DIN IEC 68-1     55/175/56  

1) Current is limited by bondwire; with an RthJC=1.8 K/W the chip is able to carry 64 A at 25°C, for detailed information
see app.-note ANPS071E at www.infineon.com/optimos
2) Defined by design. Not subject to production test

SPB42N03S2L-13 Features

• N-channel
• Enhancement mode
• Logic level
• Excellent gate charge x RDS(on) product (FOM)
• Superior thermal resistance
• 175 °C operating temperature
• Avalanche rated
• dv /dt rated

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